4th Generation Optical Memories Based on Super-resolution Near-field structure (Super-RENS) and Near-field Optics

  • Junji Tominaga


Phase-change materials have additional potential for future nanotechnological devices besides their applications in optical disks and solid-state memory devices. When comparing the crystalline state and amorphous state, phasechange materials usually have two distinctly different refractive indices. Especially, one phase shows a positive dielectric constant, while the other one shows a negative constant. Once these phases exist together with a boundary on the nanometer length scale, the optical contrast can be used to produce localized plasmons there. Such a condition can be generated by focusing a laser beam on thin multilayer stacks. This is called super-resolution near-field structure (super-RENS). Since its invention in 1998, ultra-high density optical storage system based on this principle has been developed. In this chapter, the basic concept of plasmons and near-field optics, multilayer design, and the physical background this technology is based on in phase-change films are discussed.


Laser Spot Diffraction Limit Phase Change Memory Recording Layer Optical Aperture 
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© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.Center for Applied Near-Field Optics Research, CAN-FOR, National Institute of Advanced Industrial Science & Technology, AISTTsukubaJapan

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