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4th Generation Optical Memories Based on Super-resolution Near-field structure (Super-RENS) and Near-field Optics

  • Junji Tominaga

Abstract

Phase-change materials have additional potential for future nanotechnological devices besides their applications in optical disks and solid-state memory devices. When comparing the crystalline state and amorphous state, phasechange materials usually have two distinctly different refractive indices. Especially, one phase shows a positive dielectric constant, while the other one shows a negative constant. Once these phases exist together with a boundary on the nanometer length scale, the optical contrast can be used to produce localized plasmons there. Such a condition can be generated by focusing a laser beam on thin multilayer stacks. This is called super-resolution near-field structure (super-RENS). Since its invention in 1998, ultra-high density optical storage system based on this principle has been developed. In this chapter, the basic concept of plasmons and near-field optics, multilayer design, and the physical background this technology is based on in phase-change films are discussed.

Keywords

Laser Spot Diffraction Limit Phase Change Memory Recording Layer Optical Aperture 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.Center for Applied Near-Field Optics Research, CAN-FOR, National Institute of Advanced Industrial Science & Technology, AISTTsukubaJapan

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