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Room Temperature Silicon Spin-Based Transistors

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Book cover Device Applications of Silicon Nanocrystals and Nanostructures

Part of the book series: Nanostructure Science and Technology ((NST))

Abstract

In this review article, we provide a brief overview of current research in the field of silicon spin-based transistors operating at room temperature. This field has branched into two distinct efforts: the first aimed at developing new types of silicon transistors where spin transport, in conjunction with charge transport, is utilized to realize or augment device operation, and the second focused on improving the performance and functionality of complementary metal oxide silicon devices. In this work, we provide a synopsis of these ideas and conclude with a short term prognosis.

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Acknowledgments

The authors thank C.L. Dennis for Figs. 5–9, S. Sugahara and M. Tanaka for Figs. 10–16, and Junjun Wan for Fig. 3. S. Bandyopadhyay acknowledges support from the Air Force Office of Scientific Research grant FA9550-04-1-0261.

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Authors and Affiliations

  1. ECECS Department, Universitfy of Cincinnati, Cincinnati, OH, 45221, USA

    M. Cahay & S. Bandyopadhyay

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  1. M. Cahay
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  2. S. Bandyopadhyay
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Editors and Affiliations

  1. Department of Electrical & Electronic Engineering, Tokyo University of Agriculture and Technology, Tokyo, Japan

    Nobuyoshi Koshida

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Cahay, M., Bandyopadhyay, S. (2009). Room Temperature Silicon Spin-Based Transistors. In: Koshida, N. (eds) Device Applications of Silicon Nanocrystals and Nanostructures. Nanostructure Science and Technology. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-78689-6_6

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