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Nanocrystalline Si EL Devices

  • B. Gelloz
  • N. Koshida
Part of the Nanostructure Science and Technology book series (NST)

Abstract

This review presents the recent developments in electroluminescence (EL) from nanocrystalline silicon systems. These systems include nanoporous silicon, Si-rich silicon oxides and nitrides, superlattices, and other low-dimensional silicon structures. In many of them, EL originates from recombination of excitons in silicon nanocrystals. Systems where nanocrystalline silicon is a key element but is not the luminescent material are also presented. Nanocrystalline silicon can be used for injecting electrons of high energy into a phosphor. It is also useful as sensitizer for efficient excitation of ions such as rare earth ions. Merits and drawbacks of various systems are described. Several tables summarize the performance, in terms of efficiency, stability, emission wavelength, EL threshold, and speed, of the most significant contributions for each device configuration. The most promising devices so far appear to be those including a layer of nanocrystalline silicon doped with rare earth ions, though some devices using the luminescence of Si itself are not far behind.

Keywords

Carrier Injection Charge Carrier Injection Rapid Thermal Oxidation Active Porous Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • B. Gelloz
    • 1
  • N. Koshida
    • 1
  1. 1.Tokyo University of Agriculture and TechnologyKoganei, TokyoJapan

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