Si-Rich Dielectrics for Active Photonic Devices

  • L. C. Kimerling
  • L. Dal Negro
  • M. Stolfi
  • J. H. Yi
  • J. Michel
  • X. Duan
  • E. H. Sargent
  • T.-W. F. Chang
  • V. Sukhovatkin
  • J. Haavisto
  • J. LeBlanc
Part of the Nanostructure Science and Technology book series (NST)


The quest to develop an efficient Si-based light emitter has stimulated research worldwide. Among the several approaches being considered, enhancing the probability of light emission through the use of Si nanocrystals embedded in SiO2 shows considerable promise due to the demonstration of efficient room temperature light emission and optical gain. In this chapter, we compare the nucleation, light emission, and emission sensitization of Si nanocrystals embedded in Si-rich oxide and Si-rich nitride. Based on the results of our study, we identify Si nanocrystal emission from Si-rich nitride and Er doping of Si-rich oxide as materials systems that satisfy the requirements of CMOS compatible processing and high emission efficiency for integration with Si-based electronics. We also present PbS quantum dot emission sensitization through Si nanocrystals in Si-rich nitride, an alternative approach to achieving efficient infrared emission on a Si platform. The improved electrical properties and high refractive index of Si-rich nitride also allows for the fabrication of electroluminescent devices with small footprints and active, complex photonic crystal devices for multiwavelength applications.


Excitation Cross Section Morse Sequence Emission Sensitization High Emission Efficiency Stoichiometric SiO2 



This work was partially supported by: the MRSEC program of the National Science Foundation under Contract No. DMR 02–13282, by the Draper Laboratory Incorporated Subcontract No. DL-H-546257 and by Pirelli Laboratories. We also acknowledge Dr. X. Duan for TEM sample preparation and imaging.


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • L. C. Kimerling
    • 1
  • L. Dal Negro
    • 2
    • 3
  • M. Stolfi
  • J. H. Yi
  • J. Michel
  • X. Duan
  • E. H. Sargent
  • T.-W. F. Chang
  • V. Sukhovatkin
  • J. Haavisto
  • J. LeBlanc
  1. 1.Massachusetts Institute of TechnologyCambridgeUSA
  2. 2.Department of Electrical and Computer EngineeringBoston UniversityBoston
  3. 3.Massachusetts 02215 and Materials Science DivisionBoston UniversityBoston

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