The key performance requirements of the 60 GHz low-noise amplifier (LNA) are power gain, noise figure, linearity, stability, impedance matching, power dissipation, bandwidth, and design robustness to process/voltage/temperature variation. These basic requirements are universal for LNAs, and as will be shown, the basic design methodologies at 60 GHz are not all that different than those at much lower frequencies. The circuit topologies, however, will be different to account for the three fundamental differences of 60 GHz design compared to lower frequency design, which are (1) designing using transistors operating much closer to their cutoff frequencies, (2) operating with signals with small wavelengths resulting in distributed effects within actual components of the circuit, and (3) designing with parasitic elements which represent a much larger portion of the total impedance or admittance on a given node. The implications of these three differences are now briefly discussed, and then illustrated through circuit examples later on in the chapter.
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Niknejad, A.M., Emami, S., Heydari, B., Adabi, E., Afshar, B., Floyd, B.A. (2008). Amplifiers and Mixers. In: Niknejad, A.M., Hashemi, H. (eds) mm-Wave Silicon Technology. Series on Integrated Circuits and Systems. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-76561-7_4
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