Stacked CMOS Technologies
Part of the Integrated Circuits and Systems book series (ICIR)
Stacked Complementary Metal-Oxide Semiconductor Topology
Stacking metal-oxide semiconductor field-effect transistors (MOSFETs) on top of each other to form multilayer integrated circuits (ICs) is an effective way to reduce footprint and interconnect distance. In term of topology, stacked complementary metal-oxide semiconductor (CMOS) technologies can be classified into two major categories:
One that has the active devices and interconnects interleaving each other
One that has the active device layers and interconnects grouped separately
A schematic diagram illustrating stacked CMOS technology with the interconnect metals interleaving the active device layers is shown in Fig. 3.1. This approach provides flexibility in performing vertical and horizontal routing. However, layer-by-layer fabrication becomes impractical because the allowable thermal budget is significantly reduced after the formation of the interconnect metals. In most cases, the active devices in a single layer and the...
KeywordsActive Layer Active Device Silicon Film Wafer Bonding Static Random Access Memory
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