Direct Hybrid Bonding
The production of nonmonolithic three-dimensional (3D) systems by stacking components and interconnecting them by through-substrate vias (TSVs) is intrinsically limited to the stacking of “thin” dies. The restriction not only stems from the desire to shrink system height, it also is imposed by the limited capabilities of TSV processing. Most often the metallization process is limiting the aspect ratio (i.e., height/diameter) of the 3D via thus restricting the thickness of the TSV dies. Depending on the type of TSV technology employed, the final wafer or die thickness typically ranges from 100 μm down to 15 μm. Since dies or wafers of such thickness no longer are rigid, it is a requirement that the bond guarantees mechanical stability to the thin stacked die or wafer.
Pure dielectric bonding guarantees such stability simply by the fact that the thin die or wafer is bonded over its entire surface. This method, however, limits the options for electrical interconnection to a...
KeywordsBonding Process Alignment Accuracy Protrusion Height Electrical Interconnection Hybrid Bonding
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