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3D Integration Based upon Dielectric Adhesive Bonding

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Wafer Level 3-D ICs Process Technology

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Acknowledgments

Rensselaer 3D integration research programs were supported by DARPA, MARCO, and NYSTAR through the Interconnect Focus Center, as well as by SRC, EVGroup, IBM, Freescale, and SEMATECH. We gratefully acknowledge the contributions from many colleagues associated with the 3D group at Rensselaer and from our collaborators at the University at Albany, EVGroup, IBM, Freescale Semiconductor, and SEMATECH.

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  1. Rensselaer Polytechnic Institute, Troy, New York, USA

    Jian-Qiang Lu

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  1. Jian-Qiang Lu
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  2. Timothy S. Cale
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  3. Ronald J. Gutmann
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Correspondence to Jian-Qiang Lu .

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Editors and Affiliations

  1. School Electrical & Electronic Eng., Photonics Res. Centre, Nanyang Technological University, Singapore, 639798, Singapore

    Chuan Seng Tan

  2. Center for Integrated Electronics, Rensselaer Polytechnic Institute, 8th Street 110, Troy, 12180, U.S.A.

    Ronald J. Gutmann

  3. Dept. Electrical Engineering, Massachusetts Institute of Technology, Massachusetts Ave. 77, Cambridge, 02139, U.S.A.

    L. Rafael Reif

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Lu, JQ., Cale, T.S., Gutmann, R.J. (2008). 3D Integration Based upon Dielectric Adhesive Bonding. In: Tan, C., Gutmann, R., Reif, L. (eds) Wafer Level 3-D ICs Process Technology. Integrated Circuits and Systems. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-76534-1_10

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