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Trapping Phenomena in Nanocrystalline Semiconductors

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Nanoelectronics and Photonics

Part of the book series: Nanostructure Science and Technology ((NST))

Abstract

In this chapter, trapping phenomena in nanocrystalline semiconductors (materials and devices) are presented and analyzed. The small number of atoms in a nanocrystalline semiconductor makes the contributions of the traps to different phenomena much more important as compared to a bulk semiconductor. The conventional (experimental) methods most frequently used for the investigation of traps are described. I also discuss which methods are suitable to be used for the trap investigation in nanocrystalline semiconductors and what are the trap parameters that can thus be obtained. The application of these methods, together with different non-conventional methods, to the study of the traps in nanocrystalline semiconductors, is presented. The role of the traps in possible applications as well as functioning problems of different devices is outlined.

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Acknowledgments

The work was partially supported from the CEEX-CERES 13/2006 Project in the frame of the First National Plan for Research and Development.

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Authors and Affiliations

  1. National Institute of Materials Physics, Bucharest, Romania

    Magdalena Lidia Ciurea

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  1. Magdalena Lidia Ciurea
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Editors and Affiliations

  1. Nano and Giga Solutions, Gilbert, AZ, USA

    Anatoli Korkin

  2. Initiative National de la Recherche Scientifique, Énergie, Matériaux et Télécommunications, UniversitÉdu QuÉbec, QuÉbec, QC, Canada

    Federico Rosei

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Ciurea, M.L. (2008). Trapping Phenomena in Nanocrystalline Semiconductors. In: Korkin, A., Rosei, F. (eds) Nanoelectronics and Photonics. Nanostructure Science and Technology. Springer, New York, NY. https://doi.org/10.1007/978-0-387-76499-3_8

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