Junction Barrier Controlled Schottky Rectifiers



In the case of Schottky rectifiers, it is necessary to trade-off the on-state (or conduction) power loss against the reverse blocking power loss by optimizing the Schottky barrier height1. As the Schottky barrier height is reduced, the on-state voltage drop decreases producing smaller conduction power loss. At the same time, the smaller barrier height produces an increase in the leakage current leading to larger reverse blocking power loss. The power loss can be minimized by reducing the Schottky barrier height at the expense of a reduced maximum operating temperature. This optimization process is exacerbated by the rapid increase in the leakage current with increasing reverse bias voltage due to the Schottky barrier lowering and pre-breakdown multiplication phenomena.


Leakage Current Schottky Barrier Breakdown Voltage Schottky Barrier Height Schottky Contact 
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  1. 1.
    B.J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer Scientific, New York, 2008.CrossRefGoogle Scholar
  2. 2.
    B.J. Baliga, “The Pinch Rectifier: A Low Forward Drop High Speed Power Diode”, IEEE Electron Device Letters, Vol. 5, pp. 194–196, 1984.CrossRefGoogle Scholar
  3. 3.
    B.J. Baliga, “Pinch Rectifier”, U. S. Patent 4,641,174, Issued February 3, 1987.Google Scholar
  4. 4.
    M. Mehrotra and B.J. Baliga, “Very Low Forward Drop JBS Rectifiers Fabricated using Sub-micron Technology”, IEEE Transactions on Electron Devices, Vol. 41, pp. 1655–1660, 1994.CrossRefGoogle Scholar
  5. 5.
    B.J. Baliga, “Silicon Carbide Power Devices”, World Scientific Publishing Company, 2005.Google Scholar
  6. 6.
    B.J. Baliga, “Analysis of Junction Barrier controlled Schottky Rectifier Characteristics”, Solid State Electronics, Vol. 28, pp. 1089–1093, 1985.CrossRefGoogle Scholar
  7. 7.
    B.J. Baliga, “Modern Power Devices”, Chapter 4, John Wiley and Sons, 1987.Google Scholar
  8. 8.
    B.J. Baliga, “Modern Power Devices”, Krieger Publishing Company, Malabar, FL, 1992.Google Scholar
  9. 9.
    R. Held, N. Kaminski, and E. Niemann, “SiC Merged P-N/Schottky Rectifiers for High Voltage Applications”, Silicon Carbide and Related materials - 1997, Material Science Forum, Vol. 264-268, pp. 1057–1060, 1998.Google Scholar
  10. 10.
    F. Dahlquist, , “A 2.8 kV JBS Diode with Low Leakage”, Silicon Carbide and Related materials - 1999, Material Science Forum, Vol. 338-342, pp. 1179–1182, 2000.Google Scholar
  11. 11.
    J. Wu, “A 4308 V, 20.9 mO-cm2 4H-SiC MPS Diodes based on a 30 micron Drift Layer”, Silicon Carbide and Related materials - 2003, Material Science Forum, Vol. 457-460, pp. 1109–1112, 2004.Google Scholar
  12. 12.
    B.J. Baliga and D. Alok, “Paradigm Shift in Planar Power MOSFET Technology”, Power Electronics Technology Magazine, pp. 24-32, November 2003.Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.North Carolina State UniversityPower Semiconductor Research CenterRaleigh

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