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Schottky Rectifiers

  • B. Jayant Baliga
Chapter

Abstract

A Schottky rectifier is formed by making an electrically non-linear contact between a metal and the semiconductor drift region. The Schottky rectifier is an attractive unipolar device for power electronics applications due to its relatively low on-state voltage drop and its fast switching behavior. It has been widely used in power supply circuits with low operating voltages due to the availability of excellent devices based upon silicon technology. In the case of silicon, the maximum breakdown voltage of Schottky rectifiers has been limited by the increase in the resistance of the drift region. Commercially available devices are generally rated at breakdown voltages of less than 100 volts.

Keywords

Leakage Current Schottky Barrier Breakdown Voltage Schottky Barrier Height Drift Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.North Carolina State UniversityPower Semiconductor Research CenterRaleigh

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