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Low-temperature Amorphous and Nanocrystalline Silicon Materials and Thin-film Transistors

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Flexible Electronics

Part of the book series: Electronic Materials: Science & Technology ((EMST,volume 11))

Abstract

Low-temperature processing and characterization of amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si) materials and devices are reviewed. An overview of silicon-based low-temperature thin-film dielectrics is given in the context of thin-film transistor (TFT) device operation. The low-temperature growth and synthesis of these materials are also presented and compared to conventionally fabricated high-temperature processed devices. The effect of using nc-Si contacts on a-Si:H TFTs and the stability of nc-Si TFTs is reviewed.

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Authors
  1. Andrei Sazonov
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  2. Denis Striakhilev
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  3. Arokia Nathan
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Editor information

Editors and Affiliations

  1. Palo Alto Research Center, 3333 Coyote Hill Road, 94304, Palo Alto, CA

    William S. Wong

  2. Department of Materials Science & Engineering, Stanford University, 94305-2205, Stanford, CA

    Alberto Salleo

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Sazonov, A., Striakhilev, D., Nathan, A. (2009). Low-temperature Amorphous and Nanocrystalline Silicon Materials and Thin-film Transistors. In: Wong, W.S., Salleo, A. (eds) Flexible Electronics. Electronic Materials: Science & Technology, vol 11. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-74363-9_3

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