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Ordering of Self-Assembled Quantum Wires on InP(001) Surfaces

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One-Dimensional Nanostructures

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 3))

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Abstract

InAs/InAl(Ga)As quantum wires (QWRs) have been grown on InP (001) substrates by molecular beam epitaxy (MBE) technology. A modified S-K growth mode has been presented for the formation of InAs QWRs on InAl(Ga)As/InP (001) substrate, in which the effect of lateral composition modulation in InAlAs buffer layers plays an important role. Vertical anticorrelation of InAs quantum wire superlattices has been observed and attributed to the interplay of strain field distribution and alloy phase separation in InAlAs matrix around InAs QWRs. The structural and optical properties of InAs/InAlAs QWR superlattices have also been discussed.

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Authors and Affiliations

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, P.R. China

    W. Lei, Y. H. Chen & Z. G. Wang

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  1. W. Lei
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  2. Y. H. Chen
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  3. Z. G. Wang
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  1. University of Arkansas, Fayetteville, AR, USA

    Zhiming M. Wang

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Lei, W., Chen, Y.H., Wang, Z.G. (2008). Ordering of Self-Assembled Quantum Wires on InP(001) Surfaces. In: Wang, Z.M. (eds) One-Dimensional Nanostructures. Lecture Notes in Nanoscale Science and Technology, vol 3. Springer, New York, NY. https://doi.org/10.1007/978-0-387-74132-1_12

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