Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs
This Chapter describes the effects of ionizing radiations such as gamma rays and cosmic rays on SOI MOSFETs. These effects are extremely important in military, space and avionics applications. Multi-gate FETs show exceptional resistance to total-dose and single-event effects and could become the new standard in radiation-hardened electronics.
KeywordsGate Length SRAM Cell Threshold Voltage Shift Single Event Transient Single Event Upset
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