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Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs

  • Véronique Ferlet-Cavrois
  • Philippe Paillet
  • Olivier Faynot

This Chapter describes the effects of ionizing radiations such as gamma rays and cosmic rays on SOI MOSFETs. These effects are extremely important in military, space and avionics applications. Multi-gate FETs show exceptional resistance to total-dose and single-event effects and could become the new standard in radiation-hardened electronics.

Keywords

Gate Length SRAM Cell Threshold Voltage Shift Single Event Transient Single Event Upset 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Véronique Ferlet-Cavrois
    • 1
  • Philippe Paillet
    • 1
  • Olivier Faynot
    • 2
  1. 1.Commissariat à l’Energie Atomique DIFFrance
  2. 2.Commissariat à l’Energie Atomique LETIFrance

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