Mobility in Multigate MOSFETs
This Chapter analyzes the behavior of electron mobility in different multigate structures comprising double-gate transistors, FinFETs, and silicon nanowires. Mobility in multiple gate devices is compared to that in single-gate devices and different approaches for improving the mobility in these devices, such as different crystallographic orientations and strained Si channels, are studied.
KeywordsElectron Mobility Silicon Layer Inversion Layer Double Gate Equivalent Oxide Thickness
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