This Chapter analyzes the behavior of electron mobility in different multigate structures comprising double-gate transistors, FinFETs, and silicon nanowires. Mobility in multiple gate devices is compared to that in single-gate devices and different approaches for improving the mobility in these devices, such as different crystallographic orientations and strained Si channels, are studied.
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© 2008 Springer Science+Business Media, LLC
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Gámiz, F., Godoy, A. (2008). Mobility in Multigate MOSFETs. In: Colinge, JP. (eds) FinFETs and Other Multi-Gate Transistors. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-71752-4_5
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DOI: https://doi.org/10.1007/978-0-387-71752-4_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-387-71751-7
Online ISBN: 978-0-387-71752-4
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