Physics of the Multigate MOS System
This Chapter analyzes the electrostatics of the multigate MOS system. Using quantum-mechanical concepts, it describes electron energy quantization and the properties of a one-dimensional and two-dimensional electron gas. The effects of tunneling through thin gate dielectrics on the electron population of a device are studied as well.
KeywordsGate Voltage Subthreshold Slope Double Gate Back Gate Drain Induce Barrier Lowering
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