Physics of the Multigate MOS System

  • Bogdan Majkusiak

This Chapter analyzes the electrostatics of the multigate MOS system. Using quantum-mechanical concepts, it describes electron energy quantization and the properties of a one-dimensional and two-dimensional electron gas. The effects of tunneling through thin gate dielectrics on the electron population of a device are studied as well.


Gate Voltage Subthreshold Slope Double Gate Back Gate Drain Induce Barrier Lowering 
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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Bogdan Majkusiak
    • 1
  1. 1.Institute of Microelectronics and OptoelectroncsWarsaw University of TechnologyPoland

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