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Physics of the Multigate MOS System

  • Bogdan Majkusiak

This Chapter analyzes the electrostatics of the multigate MOS system. Using quantum-mechanical concepts, it describes electron energy quantization and the properties of a one-dimensional and two-dimensional electron gas. The effects of tunneling through thin gate dielectrics on the electron population of a device are studied as well.

Keywords

Gate Voltage Subthreshold Slope Double Gate Back Gate Drain Induce Barrier Lowering 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Bogdan Majkusiak
    • 1
  1. 1.Institute of Microelectronics and OptoelectroncsWarsaw University of TechnologyPoland

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