This Chapter analyzes the electrostatics of the multigate MOS system. Using quantum-mechanical concepts, it describes electron energy quantization and the properties of a one-dimensional and two-dimensional electron gas. The effects of tunneling through thin gate dielectrics on the electron population of a device are studied as well.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2008 Springer Science+Business Media, LLC
About this chapter
Cite this chapter
Majkusiak, B. (2008). Physics of the Multigate MOS System. In: Colinge, JP. (eds) FinFETs and Other Multi-Gate Transistors. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-71752-4_4
Download citation
DOI: https://doi.org/10.1007/978-0-387-71752-4_4
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-387-71751-7
Online ISBN: 978-0-387-71752-4
eBook Packages: EngineeringEngineering (R0)