Outlines the issues associated with multigate FET manufacturing. This chapter describes thin-fin formation techniques, advanced gate stack deposition and source/drain resistance reduction techniques. Issues related to fin crystal orientation and mobility enhancement via strain engineering are tackled as well.


Chemical Mechanical Polishing Gate Length Metal Gate Short Channel Effect VLSI Technology 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Weize (Wade) Xiong
    • 1
  1. 1.Silicon Technology DevelopmentTexas Instruments, Inc.DallasUSA

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