The SOI MOSFET: from Single Gate to Multigate
General introduction of this Chapter shows the evolution of the SOI MOS transistor and retraces the history of the multigate concept. The advantages of multigate FETs in terms of electrostatic integrity and short-channel control are described, and the challenges posed by the appearance of novel effects, some of quantum-mechanical origin, are outlined.
KeywordsGate Length Short Channel Effect Double Gate Gate Oxide Thickness Drain Induce Barrier Lowering
Unable to display preview. Download preview PDF.