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The SOI MOSFET: from Single Gate to Multigate

  • Jean-Pierre Colinge

General introduction of this Chapter shows the evolution of the SOI MOS transistor and retraces the history of the multigate concept. The advantages of multigate FETs in terms of electrostatic integrity and short-channel control are described, and the challenges posed by the appearance of novel effects, some of quantum-mechanical origin, are outlined.

Keywords

Gate Length Short Channel Effect Double Gate Gate Oxide Thickness Drain Induce Barrier Lowering 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Jean-Pierre Colinge
    • 1
  1. 1.University of CaliforniaDavisUSA

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