Measuring the AC Response of SWNT-FETs
SWNT-FETs are considered promising candidates for high-frequency applications with a predicted frequency response in the terahertz regime [1, 2, 3, 4, 5]. The main reason for this anticipation is the ballistic transport in the channel over several hundred nanometers at room temperature leading to higher transconductance and mobility values compared to any other material. Significant progress has been made in understanding the DC properties of SWNT-FETs. Despite tremendous interest in the AC properties as well, a full RF characterization of SWNT-FETs have proved challenging to date.
The typical approach for RF and microwave characterization of any two-port system (including SWNT-FETs in common source (CS) or common gate (CG) configuration) requires measurement of the scattering parameters commonly referred to as S parameters. The 2×2 S matrix includes the reflection and transmission parameters at the input port (S11 and S12) and the output port (S22 and S21). Some of the...
KeywordsFrequency Response Function Parasitic Capacitance Device Under Test Back Gate Common Gate
The author would like to acknowledge collaborators, King Lee, Steve Rockwell and Ruth Zhang of Motorola, Dan Woodward of Tektronix, and Philip Wong and Jie Deng of Stanford University. The author would also like to thank Digital Realization Research Lab of Motorola for assistance in sample fabrication and characterization. The author would like to extend appreciation to Rudy Emrick and Vida Ilderem for their support of this work.
- 6.The RF and Microwave Handbook, edited by Muike Golio (CRC Press, 2000).Google Scholar
- 11.X. Huo, M. Zhang, P. C. H. Chan, Q. Liang, and Z. K. Tang, “High-frequency S parameters characterization of back-gate carbon nantoube field-effect transistors,” IEDM Technical Digest, San Francisco, CA, pp. 691–694, 2004.Google Scholar
- 15.Aaron A. Pesetski, J. E. Baumgardner, E. Folk, J. X. Przybysz, J. D. Adam, and H. Zhang, Applied Physics Letters, vol. 88, p. 113103, 2006.Google Scholar
- 16.I. Amlani, R. Zhang, J. Lewis, J. Deng, H.-S. P. Wong, and K. Lee, “First demonstration of AC gain from a nanotube based common-source amplifier,” IEDM Technical Digest, San Francisco, CA, pp. 559–562, 2006.Google Scholar
- 18.RF Measurements of Die and Packages, edited by S. A. Wartenberg (Artech house, Boston, 2002).Google Scholar
- 21.Tektronix notes, “Fundamentals of Signal Integrity” (2005).Google Scholar
- 22.J. Deng and H.-S. P. Wong, “A compact SPICE model for carbon nanotube field effect transistors including non-idealities and its application — Part I: Model of the intrinsic channel region,” Submitted to IEEE Transactions on Electron Devices, 2007.Google Scholar
- 23.J. Deng and H.-S. P. Wong, “A compact SPICE model for carbon nanotube field effect transistors including non-idealities and its application — Part II: Full device model and circuit performance benchmarking,” Submitted to IEEE Transactions on Electron Devices, 2007.Google Scholar
- 24.T. A. Fjeldly, T. Ytterdal, M. S. Shur, Introduction to Device Modeling and Circuit Simulation (Wiley-Interscience, New York, 1998).Google Scholar
- 25.Jon Marten, IEEE Radio and Wireless Symposium Workshop, presentation entitled, “High Impedance S-parameter Measurements,” San Diego CA, January 17–19, 2006.Google Scholar
- 28.D. Akinwande, G.F. Close, and H.-S.P. Wong, “Analysis of the frequency response of carbon nanotube transistors,” IEEE Transactions on Nanotechnology, vol. 5, pp. 599–605, 2006.Google Scholar