Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs

  • Debdeep Jena

III-V Nitride heterostructures are very attractive for high-power RF power ampli- fiers, among a host of other applications. The large bandgap of GaN, in addition to a number of intrinsic material properties that include high electron saturation velocity, high breakdown fields, and high thermal conductivity make the material system especially suitable for mm-wave high-electron mobility transistors (HEMTs).


Carrier Density Optical Phonon Acoustic Phonon Barrier Thickness Polar Optical Phonon 
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© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • Debdeep Jena
    • 1
  1. 1.Department of Electrical EngineeringUniversity of Notre DameNotre DameUSA

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