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Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors

  • O. Ambacher
  • V. Cimalla

The macroscopic non-linear pyroelectric polarization of wurtzite AlxGa1-xN, InxGa1xN and AlxIn1-xN ternary compounds dramatically affects the optical and electrical properties of multilayered Al(In)GaN/GaN hetero-, nanostructures and devices, due to the huge built-in electrostatic fields and bound interface charges caused by gradients in polarization at surfaces and heterointerfaces. In modeling of polarization induced effects in GaN based devices it is often assumed that polarization in group-III-nitride alloys interpolates linearly between the limiting values determined by the binary compounds.

Keywords

Spontaneous Polarization Interface Charge Average Bond Length Biaxial Strain Quantum Well Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2008

Authors and Affiliations

  • O. Ambacher
    • 1
  • V. Cimalla
    • 1
  1. 1.Institute of Micro- and NanotechnologiesTechnical University IlmenauGermany

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