Electromigration statistics and damage evolution for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages

Abstract

A series of electromigration (EM) tests were performed as a function of temperature and current density to investigate lifetime statistics and damage evolution for Pb-free solder joints with Cu and Ni under-bump-metallizations (UBMs). The EM lifetime was found to depend on the failure criterion used, so the results were compared based on the first resistance jump and conventional open-failure criterion. Solder joints with Cu UBM had a longer lifetime than Ni UBM based on the open-failure criterion, but the lifetime with Ni UBM became comparable when the first resistance jump criterion was applied. To determine the temperature in solder joints, the Joule heating effect was investigated with experiments and finite element analysis. The temperature of solder joints was determined to be approximately 15°C higher than that at the Si die surface when 1 A of current was applied. With the appropriate temperature correction, the activation energies and the current density exponents were found to be Q = 1.11 eV, n = 3.75 and Q = 0.86 eV, n = 2.1 based on the open-failure criterion for solder joints with Cu and Ni UBM, respectively. Based on the first resistance jump criterion, Q = 1.05 eV, n = 1.45 for Cu UBM and Q = 0.94 eV, n = 2.2 for Ni UBM, respectively. For solder joints with Cu UBM, voids were formed initially at the Cu₆Sn₅/solder interface while the final open failure occurred at the Cu₃Sn/Cu₆Sn₅ interface. For Ni UBM, voids were formed initially at the Ni₃Sn₄/solder interface leading to failure at the same interface. The formation of intermetallic compounds (IMCs) was enhanced under current stressing, which followed linear growth kinetics with time. The IMC growth was accompanied by volume shrinkage, which accelerated damage evolution under EM.