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The Real Transistor

  • Paul G. A. JespersEmail author
Chapter
  • 2.7k Downloads
Part of the Analog Circuits and Signal Processing book series (ACSP)

Abstract

The basic E.K.V. model considered in the previous chapter is not suited for real transistors for it makes use of the “gradual channel” approximation, like the C.S.M. Non-uniform doping, mobility degradation, short channel effects, etc. are ignored. Advanced models like BSIM and PSP, which are primarily circuit simulation tools, take care of these but don’t offer the degree of flexibility that is desirable.

We show in this chapter that as long as the source and drain voltages with respect to the substrate remain constant, DC currents, g m I D and g d I D ratios of real transistors, even sub-micron devices, can be reconstructed by means of the basic E.K.V model. Once V S or V D is modified, the parameters must be updated. The model remains unchanged however.

Keywords

Threshold Voltage Drain Current Slope Factor Gate Length Drain Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  1. 1.Université Catholique de LouvainLouvain-la-NeuveBelgium

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