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Though the C.S.M is very instrumental for understanding the operation modes of MOS transistors, it is not suited for circuit design. More appropriate models have been developed for this purpose, namely the E.K.V. model(for Enz, Krumenacher and Vittoz (Enz and Vittoz 2006)) and the A.C.M. model (for Advanced Compact Model(Cunha et al. 1998)). These belong to a category designated currently by the name of compact models. Like the C.S.M, they derive from the gradual channel approximation. More advanced versions encompassing short channel effects and mobility degradation have been developed (Enz and Vittoz 2006), but at the expense of growing complexity. This chapter reviews the basics of the E.K.V and A.C.M models.
KeywordsGate Voltage Drain Current Slope Factor Compact Model Strong Inversion
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