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Compact Modeling

  • Paul G. A. JespersEmail author
Chapter
  • 2.7k Downloads
Part of the Analog Circuits and Signal Processing book series (ACSP)

Abstract

Though the C.S.M is very instrumental for understanding the operation modes of MOS transistors, it is not suited for circuit design. More appropriate models have been developed for this purpose, namely the E.K.V. model(for Enz, Krumenacher and Vittoz (Enz and Vittoz 2006)) and the A.C.M. model (for Advanced Compact Model(Cunha et al. 1998)). These belong to a category designated currently by the name of compact models. Like the C.S.M, they derive from the gradual channel approximation. More advanced versions encompassing short channel effects and mobility degradation have been developed (Enz and Vittoz 2006), but at the expense of growing complexity. This chapter reviews the basics of the E.K.V and A.C.M models.

Keywords

Gate Voltage Drain Current Slope Factor Compact Model Strong Inversion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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  3. Enz CC, Vittoz EA (2006) Charge-based MOS Transistor Modeling. The EKV model for low-power RF IC design. Wiley, ChichesterGoogle Scholar
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  5. Oguey H, Cserveny S (1982) Sonderdruck aus dem Bulletin des SEV/VSE, Bd. 73, 1982, pp 113–119Google Scholar

Copyright information

© Springer Science+Business Media, LLC 2010

Authors and Affiliations

  1. 1.Université Catholique de LouvainLouvain-la-NeuveBelgium

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