Abstract
With the emergence of nanoscience as a major research initiative in almost every research university today, there have been intense research efforts in the fabrication of one-dimensional semiconductor nanostructures [1]. These one-dimensional semiconductor nanostructures are considered to be the critical components in a wide range of potential nanoscale device applications due to the availability of a broad selection of composition and size in these materials [2]. Among them, ZnO possesses structural, electrical, and optical properties that make it useful for a diverse range of technological applications, such as ultraviolet/blue emission devices [3], piezoelectric devices [4], acoustic-optical devices, field emission [5,6], and chemical sensors [7]. ZnO (ΔEg ≥ 3.0 eV) is thought to be the most suitable material for UV laser devices among others such as ZnS, GaN, and ZnSe because of its large exciton binding energy of 60 meV, compared to 25 meV and 22 meV for GaN and ZnSe, respectively. For wide band-gap semiconductor materials, a high carrier concentration is usually required in order to reach an optical gain that is high enough for lasing action in an electron-hole plasma (EHP) process. Excitonic recombination in semiconductors is a more efficient radiative process and it can facilitate low threshold lasing. In order to achieve efficient excitonic laser action at room temperature, one critical factor is that the binding energy of the exciton must be much greater than the thermal energy at room temperature (26 meV). Therefore the large exciton binding energy of ZnO leads to very efficient near band-gap recombination at room temperature.
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Loh, K.P., Chua, S.J. (2007). Zinc Oxide Nanorod Arrays: Properties and Hydrothermal Synthesis. In: Mansoori, G.A., George, T.F., Assoufid, L., Zhang, G. (eds) Molecular Building Blocks for Nanotechnology. Topics in Applied Physics, vol 109. Springer, New York, NY. https://doi.org/10.1007/978-0-387-39938-6_6
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