Abstract
B cell memory is characterized by persistent levels of Ag-specific serum antibody (Ab) following immunization and the ability to rapidly produce Ab upon secondary Ag exposure1. During primary immune responses in mammals, B cell activation occurs within or at the border of T cell-rich periarteriolar lymphoid sheaths following cognate interaction with CD4 TH cells2,3. This interaction induces B lymphocytes to differentiate into either foci of antibody-forming cells (AFC) found in red pulp and follicular borders or germinal center (GC) B cells located within secondary follicles2–4. The primary foci response in mice is relatively short lived (5–10 days); in contrast, the GC response is a more sustained program of cellular differentiation in which extensive B cell proliferation, somatic hypermutation of IgV gene segments, and memory cell selection occurs4–8. While GC B cells are readily identified using cell surface attributes, no such markers have been identified on murine memory B cells. The inability to reliably identify memory B cells has hampered the study of memory B cell development and differentiation.
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Chappell, C.P., Jacob, J. (2007). Germinal Center-Derived B Cell Memory. In: Katsikis, P.D., Schoenberger, S.P., Pulendran, B. (eds) Crossroads between Innate and Adaptive Immunity. Advances in Experimental Medicine and Biology, vol 590. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-34814-8_10
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DOI: https://doi.org/10.1007/978-0-387-34814-8_10
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