Abstract
The ultrahigh vacuum scanning tunneling microscope (UHV-STM) offers intriguing opportunities to explore the integration of novel nanotechnologies with existing semiconductor platforms. This chapter describes the development of the atomic-resolution hydrogen resist technique and its application to the templated self-assembly of molecular systems on silicon. The observation of a giant isotope effect in STM hydrogen desorption experiments has led to the use of deuterium to retard hot-carrier degradation in CMOS transistor technology. We have also explored the integration of carbon nanotubes with silicon and the III-V compound semiconductors. This has been facilitated by the development of the dry contact transfer (DCT) technique that enables atomically clean nanotube/substrate systems to be achieved, even for highly reactive surfaces like atomically clean silicon.
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Albrecht, P.M., Ruppalt, L.B., Lyding, J.W. (2007). UHV-STM Nanofabrication on Silicon. In: Kalinin, S., Gruverman, A. (eds) Scanning Probe Microscopy. Springer, New York, NY. https://doi.org/10.1007/978-0-387-28668-6_33
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DOI: https://doi.org/10.1007/978-0-387-28668-6_33
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