SOI Device Electrical Properties

As described in the previous chapter, the SOI device is essentially identical to the buld MOSFET well known to the industry, with the addition of an insulating layer under a thin active silicon region. This once, relativelly simple alteration has a profound effect on every mode of the device’s operation. At first glance, the behavior of the resulting structure is simple, and similar to the bulk MOSFET. A closer look reveals the complexity that this change creates. Given the description of the SOI structure in Chapter 2, lets examine the electrical responses it causes.