SOI Device Structures

Silicon On Insulator (SOI) structures do not vary much from normal bulk CMOS. The major difference is the insertion of the insulation layer beneath the devices. Once this is accomplished, one could continue to use the identical bulk CMOS process and fabricate the devices. No changes to the process would be required. This chapter will discuss the physical structures and fabrication techniques of the wafer, FETs, diodes, resistors and thin oxide capacitors. Intertwined with the physical descriptions will be the mention of process changes to enhance the SOI device’s usability and performance.