Abstract
The application of fullerene as a negative resist was first studied by Tada and Kanayama who verified that this material could be used as a negative electron beam resist. Its small molecule enables the resist to have a resolution of at least 20 nm. Robinson et al. demonstrated that chemical modification of C60 by adding functional groups to the C60 cage can significantly enhance the resist properties. Chemical amplification of the fullerene derivatives improves their sensitivities while maintaining their high resolution. In this chapter, the concepts of lithography and lithography techniques which include electron beam lithography technology systems are described. Current electron beam resists and their characteristics are discussed. A review of the application of fullerene and its derivatives as electron beam resists is presented. Finally, concepts of chemical amplification and current chemically amplified resists are discussed.Device density of modern computer components has grown exponentially as predicted by Moore’s Law [1] with a decrease in components sizes. Smaller devices mean a reduced interconnect length, reducing the distance electrons have to travel and thus signal delay. Although photolithography has been the technique of choice for the fabrication of microdevices for many years, electron beam lithography is a very promising lithographic technique for nanoscale patterning due to its flexibility and nearly unlimited resolution capability, able to fabricate sub-50 nm features. A factor that influences its resolution is the electron beam resists. The application of fullerene as a negative resist was first studied by Tada and Kanayama [2] who verified that this material could be used as a negative electron beam resist. Its small molecule enables the resist to have a resolution of at least 20 nm. Robinson et al. [3–5] demonstrated that chemical modification of C60 by adding functional groups to the C60 cage can significantly enhance the resist properties. Chemical amplification of the fullerene derivatives improves their sensitivities while maintaining their high resolution [6, 7]. In this chapter, the concepts of lithography and lithography techniques which include electron beam lithography technology systems are described. Current electron beam resists and their characteristics are discussed. A review of the application of fullerene and its derivatives as electron beam resists is presented. Finally, concepts of chemical amplification and current chemically amplified resists are discussed.
Keywords
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsReferences
Moore, G.E.: Electronics 38, 114 (1965)
Tada, T., Kanayama, T.: Jpn J. Appl. Phys. 35, L63 (1998)
Robinson, A.P.G.: PhD thesis, University of Birmingham, UK (1999)
Robinson, A.P.G., Palmer, R.E., Tada, T., Kanayama, T., Preece, J.A., Philp, D., Jonas, U., Deiderich, F.: Chem. Phys. Lett. 289, 586 (1998)
Robinson, A.P.G., Palmer, R.E., Tada, T., Kanayama, T., Shelley, E.J., Philp, D., Preece, J.A.: Chem. Phys. Lett. 312, 469 (1999)
Robinson, A.P.G., Zaid, H.M., Gibbons, F.P., Palmer, R.E., Manickam, M., Preece, J.A., Brainard, R., Zampini, T., O’Connell, K.: Microelectron. Eng. 83(4–9), 1115–1118 (2006)
Gibbons, F.P., Zaid, H.M., Manickam, M., Preece, J.A., Palmer, R.E., Robinson, A.P.G.: Small 3(12), 2076–2080 (2007)
Levinson, H.J., Arnold, W.H.: In: Rai Chaudhury, P. (ed.) Handbook of Microlithography, Micromachining, and Microfabrication, vol. 1. IEE, London (1997)
Ledwith, A.: In: Moss, S.J., Ledwith, A. (eds.) The Chemistry of the Semiconductor Industry. Blackie and Son Ltd, London (1987)
Ronse, K.: Microelectron. Eng. 67/68, 300 (2003)
Lin, B.J., Rai-Choudhury, P.: In: Rai Chaudhury, P. (ed.) Handbook of Microlithography, Micromachining, and Microfabrication, vol. 1. IEE, London (1997)
Wallraff, G.M., Hinsberg, W.D.: Chem. Rev. 99, 1801 (1999)
Harriott, L.R.: Proc. IEEE 89, 366 (2001)
Brainard, R.L., Barclay, G.G., Anderson, E.H., Ocola, L.E.: Microelectron. Eng. 61/62, 707 (2002)
Peckerar, M.C., Perkins, F.K., Dobisz, E.A., Glembocki, O.J.: In: Rai Chaudhury, P. (ed.) Handbook of Microlithography, Micromachining and Microfabrication, vol. 1. IEE, London (1997)
Brennan, K.F., Brown, A.S.: Theory of Modern Electronic Semiconductor Devices. Wiley, New York (2002)
Ito, T., Okazaki, S.: Nature 406, 1027 (2000)
Chan, S., Li, Y., Rothberg, L.J., Miller, B.L., Fauchet, P.M.: Mat. Sci. Eng. C Biomim. 15, 277 (2001)
Takhistov, P.: Biosens. Bioelectron. 19, 1445 (2004)
Mulkens, J., McClay, J., Tirri, B., Brunotte, M., Mecking, B., Jasper, H.: SPIE Proc. 5040, 753 (2003)
Rothschild, M., Forte, A.R., Kunz, R.R., Palmateer, S.C., Sedlacek, J.H.C.: IBM J. Res. Dev. 41, 49 (1997)
Piner, R.D., Zhu, J., Xu, F., Hong, S., Mirkin, C.A.: Science 283, 661 (1999)
Guo, L.J.: J. Phys. D Appl. Phys. 37, R123 (2004)
Austin, M.D., Ge, H., Wu, W., Li, M., Yu, Z., Wasserman, D., Lyon, S.A., Chou, S.Y.: Appl. Phys. Lett. 84, 5299 (2004)
Melngailis, J., Mondelli, A.A., Berry III, I.L., Mohondro, R.: J. Vac. Sci. Technol. B 16, 927 (1998)
Cerrina, F.: In: Rai Chaudhury, P. (ed.) Handbook of Microlithography, Micromachining and Microfabrication, vol. 1. IEE, London (1997)
Simon, G., Haghiri-Gosnet, A.M., Bourneix, J., Decanini, D., Chen, Y., Rousseaux, F., Launois, H., Vidal, B.: J. Vac. Sci. Technol. B 15, 2489 (1997)
Silverman, J.P.: J. Vac. Sci. Technol. B 15, 2117 (1997)
McCord, M.A., Rooks, M.J.: In: Rai Chaudhury, P. (ed.) Handbook of Microlithography, Micromachining, and Microfabrication, vol. 1. IEE, London (1997)
Roberts, E.D.: In: Moss, S.J., Ledwith, A. (eds.) The Chemistry of the Semiconductor Industry, p. 197. Blackie and Son Ltd, London (1987)
Berger, S.D., Gibson, J.M., Camarda, R.M., Farrow, R.C., Huggins, H.A., Kraus, J.S., Liddle, J.A.: J. Vac. Sci. Technol. B 9, 2996 (1991)
Harriott, L.R.: J. Vac. Sci. Technol. B 15, 2130 (1997)
Manako, S., Fujita, J., Ochiai, Y., Nomura, E., Matsui, S.: Jpn. J. Appl. Phys. 36, 7773 (1999)
Henschel, W., Georgiev, Y.M., Kurz, H.: J. Vac. Sci. Technol. B 21, 2018 (2003)
Hacker, N.P.: MRS Bull. 22, 33 (1997)
Aktary, M., Jensen, M.O., Westra, K.L., Brett, M.J., Freeman, M.R.: J. Vac. Sci. Technol. B 21, L5 (2003)
Yasin, S., Hasko, D.G., Ahmed, H.: Appl. Phys. Lett. 78, 2760 (2001)
Medeiros, D.R., Aviram, A., Guarnieri, C.R., Huang, W.-S., Kwong, R., Magg, C.K., Mahorowala, A.P., Moreau, W.M., Petrillo, K.E., Angelopoulos, M.: IBM J. Res. Dev. 45, 639 (2001)
Matsuda, S.: Polym. Eng. Sci. 17, 410 (1977)
Tada, T., Kanayama, T.: J. Vac. Sci. Technol. B 13, 2801 (1995)
Word, M.J., Adesida, H., Berger, P.R.: J. Vac. Sci. Technol B 21, L12 (2003)
Peuker, M., Lim, M.H., Smith, H.I., Morton, R., van Langen-Suurling, A.K., Romijn, J., van der Drift, E.W.J.M., van Delft, F.C.M.J.M.: Microelectron. Eng. 61/62, 803 (2002)
van Delft, F.C.M.J.M., Weterings, J.P., van Langen-Suurling, A.K., Romijn, H.: J. Vac. Sci. Technol. B 18, 3419 (2000)
Ishii, T., Tamamura, T., Shigehara, K.: Jpn. J. Appl. Phys. 39, L1068 (2000)
Ishii, T., Murata, Y., Shigehara, K.: Jpn. J. Appl. Phys. 40, L478 (2001)
Patsis, G.P., Gogolides, E., Van Werden, K.: Jpn. J. Appl. Phys. 44, 6341 (2005)
Fujita, J., Ohnishi, Y., Ochiai, Y., Nomura, E., Matsui, S.: J. Vac. Sci. Technol. B 14, 4272 (1996)
Yasin, S., Hasko, D.G.: J. Vac. Sci. Technol. B 19, 311 (2001)
Manako, S., Ochiai, Y., Yamamoto, H., Teshima, T., Fujita, J., Nomura, E.: J. Vac. Sci. Technol. B 18, 3424 (2000)
Kihara, N., Saito, S., Ushirogouchi, T., Nakase, M.: J. Photopolym. Sci. Technol. 11, 553 (1998)
Tada, T., Kanayama, T., Robinson, A.P.G., Palmer, R.E., Allen, M.T., Preece, J.A., Harris, K.D.M.: Microelectron. Eng. 53, 425 (2000)
Robinson, A.P.G., Palmer, R.E., Tada, T., Kanayama, T., Allen, M.T., Preece, J.A., Harris, K.D.M.: J. Vac. Sci. Technol. B 18, 2730 (2000)
Sailer, H., Ruderisch, A., Kern, D.P., Schurig, V.: J. Vac. Sci. Technol. B 20, 2958 (2002)
Saito, S., Kihara, N., Ushirogouchi, T.: Microelectron. Eng. 61/62, 777 (2002)
Robinson, A.P.G., Palmer, R.E., Tada, T., Kanayama, T., Allen, M.T., Preece, J.A., Harris, K.D.M.: J. Phys. D Appl. Phys. 32, L75 (1999)
Kroto, H.W., Heath, J.R., O’Brien, S.C., Curl, R.F., Smalley, R.E.: Nature 318, 162 (1985)
Zaid, H.M.: PhD thesis, University of Birmingham, UK (2006)
Tada, T., Uekusa, K., Kanayama, T., Nakayama, T., Chapman, R., Cheung, W.Y., Eden, L., Hussain, I., Jenning, M., Perkins, J., Phillips, M., Preece, J.A., Shelley, E.: Microelectron. Eng. 61–62, 737 (2002)
Ito, H.: Jpn. J. Appl. Phys. 31, 4273 (1992)
Ito, H.: J. Polym. Sci. 41, 3863 (2003)
Ito, H.: IBM J. Res. Dev. 41, 69 (1997)
Hinsberg, W.D., Wallraff G.M., Allen, R.D., et al.: Kirk-Othmer Encyclopedia of Chemical Technology, vol. 15. Wiley, New York (1998)
Liu, H., de Grandpre, M.P., Feely, W.E.: J. Vac. Sci. Technol. B 6, 379 (1988)
Yoshimura, T., Nakayama, Y., Okazaki, S.: J. Vac. Sci. Technol. B 10, 2615 (1992)
Azuma, T., Masui, K., Takigami, Y., Sasaki, H., Sakai, K., Nomaki, T., Kato, Y., Mori, I.: Jpn. J. Appl. Phys. 30, 3138 (1991)
Dentinger, P.M., Taylor, J.W.: J. Vac. Sci. Technol. B 15, 2632 (1997)
Kudryashov, V., Yuan, X.-C., Cheong, W.-C., Radhakrishnan, K.: Microelectron. Eng. 67–68, 306 (2003)
Pépin, A., Studer, V., Decanini, D., Chen, Y.: Microelectron. Eng. 73–74, 233 (2004)
van Delft, F.C.M.J.M., Holthuysen, F.G.: Microelectron. Eng. 46, 383 (1999)
Macintyre, D., Thoms, S.: Microelectro. Eng. 35, 213 (1997)
Cui, Z., Prewett. P.: Microelectron. Eng. 46, 255 (1999)
Cui, Z., Gerardino, A., Gentili, M., DiFabrizio, E.: J. Vac. Sci. Technol. B 16, 3284 (1998)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2010 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Zaid, H.M. (2010). Fullerene (C60) and its Derivatives as Resists for Electron Beam Lithography. In: Carbon and Oxide Nanostructures. Advanced Structured Materials, vol 5. Springer, Berlin, Heidelberg. https://doi.org/10.1007/8611_2010_13
Download citation
DOI: https://doi.org/10.1007/8611_2010_13
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-14672-5
Online ISBN: 978-3-642-14673-2
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)