Abstract
The development of SiC-FET gas sensors has proceeded for about fifteen years. The maturity of the SiC material and a deeper understanding of the transduction mechanisms and sensor surface processes behind the sensitivity to a number of target substances have recently allowed the development of market-ready sensors for certain applications. Some examples presented below are a sensor system for domestic boiler control, an ammonia sensor for control of the SCR (selective catalytic reduction) and SNCR (Selective Non-Catalytic Reduction) NOx abatement processes as well as other more or less market-ready applications. In parallel, the basic research continues in order to reach more demanding markets/new applications and also to possibly lower the production costs of the sensors. Therefore, current research and future challenges are also treated, such as the development of new types of conducting ceramics for ohmic contacts to SiC in order to increase the operation temperature beyond the present state of the art.
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References
Lundström I, Shivaraman MS, Svensson C (1975) A hydrogen-sensitive MOS field effect transistor. J Appl Phys 26:55–57
Lundström I, Sundgren H, Winquist F, Eriksson M, Krantz-Rülcker C, Lloyd Spetz A (2007) Twenty-five year of field effect gas sensors research in Linköping. Sens Actuators B 121:247–262
Löfdahl M, Utaiwasin C, Carlsson A, Lundström I, Eriksson M (2001) Gas response dependence on gate metal morphology of field-effect devices. Sens Actuators B 80:183–192
Spetz A, Armgarth M, Lunström I (1988) Hydrogen and ammonia response of metal- silicon dioxide-silicon structures with thin platinum gates. J Appl Phys 64(3):1274–1283
Spetz A, Helmersson U, Enquist F, Armgarth M, Lundström I (1989) Structure and ammonia sensitivity of thin platinum or iridium gates in metal- oxide -silicon capacitors. Thin Solid Films 177:77–93
Lloyd Spetz A, Baranzahi A, Tobias P, Lundström I (1997) High temperature sensors based on metal-insulator-silicon carbide devices. Phys Stat Sol A 162:493–511
Wright NG, Horsfall AB (2007) SiC sensors: a review. J Phys D Appl Phys 40:6345–6354
SenSiC AB, Isafjordsgatan 39B, SE-164 40 Kista, Sweden
Fogelberg J, Eriksson M, Dannetun H, Petersson L-G (1995) Kinetic modeling of hydrogen adsorption in thin films on hydrogen-sensitive field effect devices. Observation of large hydrogen-induced dipoles at the Pd-SiO2 interface. J Appl Phys 78(2):988–996
Wallin M, Grönbeck H, Lloyd Spetz A, Skoglundh M (2004) Vibrational study of ammonia adsorption on Pt/SiO2. Appl Surf Sci 235:487–500. doi:10.1016/j.apsusc.2004.03.225
Eriksson M, Petersson L-G (1998) Real time measurements of hydrogen desorption and absorption during CO exposures of Pd: hydrogen sticking and dissolution. Appl Surf Sci 133:89–97
Schalwig J, Kreisl P, Ahlers S, Müller G (2002) Response mechanism of SiC-based MOS field-effect gas sensors. IEEE Sens J 2(5):394–402
Dannetun HM, Petersson L-G, Söderberg D, Lundström I (1985) The H2-O2 reaction on palladium studied over a large pressure range: independence of the microscopic sticking coefficients on surface condition. Surf Sci 152(153):559–568
Salomonsson A, Eriksson M, Dannetun H (2005) Hydrogen interaction with platinum and palladium metal – insulator – semiconductor devices. J Appl Phys 98: 014505-1–014505-9
Åbom AE, Haasch RT, Hellgren N, Finnegan N, Hultman L, Eriksson M (2003) Characterization of the metal-insulator interface of field-effect chemical sensors. J Appl Phys 93(12):9760–9768
Åbom AE, Persson P, Hultman L, Eriksson M (2002) Influence of gate metal film growth parameters on the properties of gas sensitive field-effect devices. Thin Solid Films 409:233–242
Kahng YH, Lu W, Tobin RG, Loloee R, Ghosh R (2009) The role of oxygen in hydrogen sensing by a platnium-gate silicon carbide gas sensor: an ultrahigh vacuum study. J Appl Phys 105:0645111-1–064511-7
Kahng YH, Tobin RG, Loloee R, Ghosh R (2007) Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor. J Appl Phys 102:064505-1–064505-9
Eisele I, Doll T, Burgmair (2001) Low power gas detection with FET sensors. Sens Actuators B 78:19–25
Ostrick B, Fleischer M, Meixner H (2003) The influence of interfaces and interlayers on the gas sensitivity in work function type sensors. Sens Actuators B 95:271–274
Moos R, Sahner K, Fleischer M, Guth U, Barsan N, Weimar U (2009) Solid state gas sensor research in Germany – a status report. Sensors 9:4323–4365
Andersson M, Ljung P, Mattsson M, Löfdahl M, Lloyd Spetz A (2004) Investigations on the possibilities of a MISiCFET sensor system for OBD and combustion control utilizing different catalytic gate materials. Top Catal 30(31):365–368
Lloyd Spetz A, Skoglundh M, Ojamäe L (2008) FET gas sensing mechanism, experimental and theoretical studies. In: Comini E, Faglia G, Sberveglieri G (eds) Solid state gas sensing, chap 4. Springer, Norwell, MA, USA, pp 153–179, ISBN: 978-0-387-09664-3
Salomonsson A, Petoral RM Jr, Uvdal K, Aulin C, Käll P-O, Ojamäe L, Strand M, Sanati M, Lloyd Spetz A (2006) Nanocrystalline ruthenium oxide and ruthenium in sensing applications – an experimental and theoretical study. J Nanoparticle Res 8:899–910. doi:10.1007/s11051-005-9058-1
Wallin M, Byberg M, Grönbeck H, Skoglundh M, Eriksson M, Lloyd Spetz A (2007) Vibrational analysis of H2 and NH3 adsorption on Pt/SiO2 and Ir/SiO2 model sensors. In Proceedings of IEEE Sensors 2007, Atlanta, USA, 28–31 Oct 2007, pp 1315–1317
Wallin M, Grönbeck H, Lloyd Spetz A, Eriksson M, Skoglundh M (2005) Vibrational analysis of H2 and D2 adsorption on Pt/SiO2. J Phys Chem B 109:9581–9588
Nakagomi S, Tobias P, Baranzahi A, Lundström I, Mårtensson P, Lloyd Spetz A (1997) Influence of carbon monoxide, water, and oxygen on high temperature catlaytic metal–oxide–silicon carbide structures. Sens Actuators B 45(3):183–191
Andersson M, Lloyd Spetz A (2010) Tailoring of SiC based field effect gas sensors for improved selectivity to non-hydrogen containing species. In: Proceedings of IMCS13, Perth, Australia, 12–14 July 2010, p 369
Andersson M, Wingbrant H, Lloyd Spetz A (2005) Study of the CO response of SiC based field effect gas sensors. In: Proceedings of IEEE Sensors 2005, Irivine, USA, 31 Oct–2 Nov 2005, pp 105–108
Becker E, Skoglundh M, Andersson M, Lloyd Spetz A (2007) In situ DRIFT study of hydrogen and CO adsorption on Pt/SiO2 model sensors. In: Proceedings of IEEE Sensors 2007, Atlanta, USA, 28–31 Oct 2007, pp 1028–1031
Becker E, Andersson M, Eriksson M, Lloyd Spetz A, Skoglundh M (2011) Study of the sensing mechanism towards carbon monoxide of platinum-based field effect sensors. IEEE Sens J 11(7):1527–1534
Andersson M, Lloyd Spetz A (2009) Tailoring of field effect gas sensors for sensing of nonhydrogen containing substances from mechanistic studies on model systems. In: Proceedings of IEEE Sensors 2009, Christchurch, New Zealand, 26–28 Oct 2009, pp 2031–2036
Nakagomi S, Sato K, Suzuki S, Kokubun Y (2009) Influence of ambient, gate metal and oxide thickness on interface state density and time constant in MOSiC capacitor. Mater Sci Forum 600–603:735–738
Weidemann O, Hermann M, Steinhoff G, Wingbrant H, Lloyd Spetz A, Stutzmann M, Eickhoff M (2003) Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes. Appl Phys Lett 83(4):773–775
Zangooie S, Arwin H, Lundström I, Lloyd Spetz A (2000) Ozone treatment of SiC for improved performance of gas sensitive Schottky diodes. Mater Sci Forum 338–342:1085–1088
Neudeck PG, Spry DJ, Truneck AJ, Evans LJ, Chen L-Y, Hunter GW, Androjna D (2009) Hydrogen gas sensors fabricated on atomically flat 4H-SiC webbed cantilevers. Mater Sci Forum 600–603:1199–1202
Comini E, Cusma A, Kaciulis S, Kandasamy S, Padeletti G, Pandolfi L, Sberveglieri G, Trinchi A, Wlodarski W (2006) XPS investigation of CoOx-based MRISiC structures for hydrocarbon gas sensing. Surf Interface Anal 38:736–739
Nakagomi S, Lloyd Spetz A (2006) Gas sensor device based on catalytic Metal – Metal Oxide – SiC structure. In: Grimes CA, Dickey EC (eds) Encyclopedia of sensors, vol 4. American Scientific, Stevenson Ranch, CA, USA, pp 155–170
Trinchi A, Kandasamy S, Wlodarski W (2008) High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices. Sens Actuators B 133:705–716
Zhu W, chen XF, Tan OK, Deng J (2002) Hydrogen-sensitive amorphous ferroelectric thin film capacitive devices. Integr Ferroelectron 44:25–75
Di Natale C, Buchholt K, Martinelli E, Paolesse R, Pomarico G, D'Amico A, Lundström I, Lloyd Spetz A (2009) Investigation of quartz microbalance and chemfet transduction of molecular recognition events in a metalloporphyrin film. Sens Actuators B 135:560–567
Ghosh RN, Tobias P (2005) SiC field effect devices operating at high temperatures. J Electron Mater 34:345–350
Racault C, Langlais F, Naslain R (1994) Solid state synthesis and characterization of the ternary phase Ti3SiC2. J Mater Sci 29:3384–3392
Wingbrant H, Svenningstorp H, Kubinski DJ, Visser JH, Andersson M, Unéus L, Löfdahl M, Lloyd Spetz A (2006) MISiC-FET NH3 sensors for SCR control in exhaust and flue gases. In: Grimes CA, Dickey EC (eds) Encyclopedia of sensors, vol 6. American Scientific, Stevenson Ranch, CA, USA, pp 205–218
Wingbrant H, Svenningstorp H, Salomonsson P, Kubinski D, Visser JH, Löfdahl M, Lloyd Spetz A (2005) Using a MISiC-FET sensor for detecting NH3 in SCR systems. IEEE Sens J 5(5):1099–1105
Kim CK, Lee JH, Choi SM, Noh IH, Kim HR, Cho NI, Hong C, Jang GE (2001) Pd- and Pt-SiC Schottky diodes for detection of H2 and CH4 at high temperature. Sens Actuators B 77:455–462
Ali M, Cimalla V, Lebedev V, Stauden Th, Wang Ch, Ecke G, Tilak V, Sandvik P, Ambacher O (2007) Reactively sputtered InxVyOz films for detection of NOx, D2 and O2. Sens Actuators B 123:779–783
Karthigeyan A, Gupta RP, Burgmair M, Zimmer M, Sulima T, Venkataraj S, Sharma SK, Eisele I (2004) Iridium oxide as low temperature NO2-sensitive material for work function-based gas sensors. IEEE Sens J 4(2):189–194
Ostrick B, Pohle R, Fleischer M, Meixner H (2000) TiN in work function type sensors: a stable ammonia sensitive material for room temperature operation with low humidity cross sensitivity. Sens Actuators B 68:234–239
Loloee R, Chorpening B, Beer S, Ghosh RN (2008) Hydrogen monitoring for power plant applications using SiC sensors. Sens Actuators B 129:200–210
Meixner H, Gerblinger J, Lampe U, Fleischer M (1995) Thin-film gas sensors based on semiconducting metal oxides. Sens Actuators B 23:119–125
Baranzahi A, Tobias P, Lloyd Spetz A, Lundström I, Mårtensson P, Glavmo M, Göras A, Nytomt J, Salomonsson P, Larsson H (1997) Fast responding air/fuel sensor for individual cylinder control. SAE Technical Paper Series 972940, Combustion and Emisson Formation in SI Engines, SP-1300: 231–240
Larsson O, Göras A, Nytomt J, Carlsson C, Lloyd Spetz A, Artursson T, Holmberg M, Lundström I, Ekedahl L-G, Tobias P (2002) Estimation of air fuel ratio of individual cylinders in SI engines by means of MISiC sensor signals in a linear regression model. In: Proceedings of SAE2002, Detroit, USA, 4–7 Mar 2002 (2002-01-0847, also in SAE 2002 Transactions J Engines)
Tobias P, Lloyd Spetz A, Mårtensson P, Baranzahi A, Göras A, Lundström I (1999) Moving gas outlets for the evaluation of fast gas sensors. Sens Actuators B 58(1–3):389–393
Wingbrant H, Svenningstorp H, Salomonsson P, Tengström P, Visser J, Ekedahl L-G, Lundström I, Lloyd Spetz A (2003) The speed of response of MISiCFET devices. Sens Actuators B 93(1–3):286–294
Ghosh RN, Tobias P, Hu H, Koochesfahani M (2005) Fast solid state gas sensor characterization with millisecond resolution. In: 4th IEEE conference on sensors, Irvine, CA, 31 Oct–3 Nov 2005
Gerblinger J, Lampe U, Meixner H (1995) Sensitivity mechanism of metal oxides to oxygen detected by means of kinetic studies at high temperatures. Sens Actuators B 25:639–642
Visser J, Soltis RE (2001) Automotive exhaust gas sensing systems. IEEE Trans Instrum Meas 50(6):1543–1550
Wingbrant H, Svenningstorp H, Salomonsson P, Tengström P, Moldin D, Ekedahl L-G, Lundström I, Lloyd Spetz A (2003) Using a MISiCFET device as a cold start sensor. Sens Actuators B 93(1–3):295–303
Sandvik P, Ali M, Tilak V, Matocha K, Stauden T, Tucker J, Deluca J, Ambacher O (2006) SiC-based MOSFETS for harsh environment emissions sensors. Mater Sci Forum 527–529:1457–1460
Hunter GW, Xu JC, Dungan LK, Ward BJ, Rowe S, Williams J, Makel DB, Liu CC, Chang CW (2008) Smart sensor systems for aerospace applications: from sensor development to application testing. ECS Trans 16(11):333–344
Andersson M, Everbrand L, Lloyd Spetz A, Nyström T, Nilsson M, Gauffin C, Svensson H (2007) A MISiCFET based gas sensor system for combustion control in small-scale wood fired boilers. In: Proceedings of IEEE Sensors 2007, Atlanta, USA, 28–31 Oct 2007, pp 962–965
Andersson M, Wingbrant H, Petersson H, Unéus L, Svenningstorp H, Löfdahl M, Holmberg M, Lloyd Spetz A (2006) Gas sensor arrays for combustion control. In: Grimes CA, Dickey EC (eds) Encyclopedia of sensors, vol 4. American Scientific, Stevenson Ranch, CA, USA, pp 139–154
Unéus L, Artursson T, Mattsson M, Ljung P, Wigren R, Mårtensson P, Holmberg M, Lundström I, Lloyd Spetz A (2005) Evaluation of on-line flue gas measurements by MISiCFET and metal-oxide sensors in boilers. IEEE Sens J 5(1):75–81
Virshup A, Porter LM, Lukco D, Buchholt K, Hultman L, Lloyd Spetz A (2009) Investigation of thermal stability and degradation mechanism in Ni-based ohmic contacts to n-type SiC for high-temperature gas sensors. J Electron Mater 38(4):569–573
Okojie RS, Lukco D, Chen YL, Spry DJ (2002) Reliability assessment of Ti/TaSi2/Pt ohmic contacts on SiC after 1000 h at 600°C. J Appl Phys 91(10):6553–6559
Buchholt K, Ghandi R, Domeij M, Zetterling C-M, Lu J, Eklund P, Hultman L, Lloyd Spetz A (2011) Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4 H-silicon carbide. Appl Phys Lett 98(4):042108. doi:10.1063/1.3549198
Eklund P, Beckers M, Jansson U, Högberg H, Hultman L (2010) The Mn+1AXn phases: materials science and thin film processing. Thin Solid Film 518:1851–1878
Pecz B, Toth L, di Forte-Poisson MA, Vacas J (2003) Ti3SiC2 formed in annealed Al/Ti contacts to p-type SiC. Appl Surf Sci 206:8–11
Sun Z, Zhou Y, Li M (2001) High temperature oxidation behavior of Ti3SiC2 based material in air. Acta Mater 49:4347–4353
Wenzel R, Goesmann F, Schmid-Fetzer R (1998) Diffusion barriers in gold-metallized titanium-based contact structures on SiC. J Mat Sci Mat in Electr 9(2):109–113
Sandvik P, Babes-Dornea E, Trudel AR, Georgescu M, Tilak V, Renaud D (2006) GaN-based Schottky diodes for hydrogen sensing in transformer oil. Phys Stat Sol C 6:2283–2286
Belov I, Wingbrant H, Lloyd Spetz A, Sundgren H, Thunér B, Svenningstorp H, Leisner P (2006) CFD analysis of packaging and mounting solutions for SiC-based gas sensors in automotive applications. Sens Lett 4:29–37
Eriksson J, Roccaforte F, Reshanov S, Leone S, Giannazzo F, LoNigro R, Fiorenza RP, Raineri V (2011) Nanoscale characterization of electrical transport at metal/3 C-SiC interfaces. Nanoscale Res Lett 6:120–124
Lebedev AA, Abramov PL, Bogdanova EV, Lebedev SP, Nelson DK, Oganesyan GA, Tregubova AS, Yakimova R (2008) Highly doped p-type 3C-SiC on 6H-SiC substrates. Semicond Sci Technol 23:075004
Song J, Lu W (2008) Operation of Pt/AlGaN/GaN-heterojunction Field Effect-Transistor hydrogen sensors with low detection limit and high sensitivity. IEEE Electron Dev Lett 29(11):1193–1195
Baur B, Howgate J, von Ribbeck H-G, Gawlina Y, Bandalo V, Steinhoff G, Stutsmann M, Eickhoff M (2006) Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors. Appl Phys Lett 89:183901
Baur B, Steinhoff G, Hernando J, Purrucker O, Tanaka M, Nickel B, Stutzmann M, Eickhoff M (2005) Chemical functionalization of GaN and AlN surfaces. Appl Phys Lett 87: 26391-1–26391-3
Steinhoff G, Baur B, Wrobel G, Ingebrant S, Offenhäuser A, Dadgar A, Krost A, Stutzmann M, Eickhoff M (2005) Recording of cell action potentials with AlGaN/GaN field-effect transistors. Appl Phys Lett 86:033901 (with G. Steinhoff G, Baur B, Wrobel G, Ingebrandt S, Offenhäusser A, Stutzmann M, Eickhoff M (2006) Erratum:[Recording of Cell Action Potentials with AlGaN/GaN Field Effect Transistors], Appl Phys Lett 89: 019901)
Koike K, Takagi D, Kawasaki M, Hashimoto T, Inoue T, Ogata K-I, Sasa S, Inoue M, Yano M (2007) Ion sensitive characteristics of an electrolyte-solution-gate ZnO/ZnMgO heterjunction field-effect transistor as a biosensing transducer. Jpn J Appl Phys 46(36):L865–L867
Yakimova R, Petoral RM Jr, Yazdi GR, Vahlberg C, Lloyd Spetz A, Uvdal K (2007) Surface functionalization and biomedical applications based on SiC. J Phys D Appl Phys 40:6435–6442
Rubio-Retama J, Hernando J, Lopez-Ruiz B, Härtl A, Steinmüller D, Stutzmann M, Lopez-Cabarcos E, Garrido JA (2006) Synthetic nanocrystalline diamond as a third-generation biosensor support. Langmuir 22:5837–5842
Helwig A, Müller G, Garrido JA, Eickhoff M (2008) Gas sensing properties of hydrogen-terminated diamond. Sens Actuators B 133:156–165
Roy S, Gao Z (2009) Nanostructure based electrical biosensors. Nano Today 4:318–334
Pearce R, Iakimov T, Andersson M, Hultman L, Lloyd Spetz A, Yakimova R (2011) Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection. Sens Actuators B 155(2):451–455
Emtsev KV, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney JL, Ohta T, Reshanov SA, Röhrl J, Rotenberg E, Schmid AK, Waldman D, Weber HB, Seyller T (2009) Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat Mater 8:203–207
Acknowledgment
Financial support is acknowledged from VINNOVA, The Swedish Agency for Innovation Systems, Industrial Partners and Linköping University through the VINN Excellence Center FunMat, Functional Nanoscale Materials, at Linköping University, Sweden and from S-SENCE, Swedish Sensor Center, VINNOVA Excellence Center at Linköping University 1995–2005, and from the Swedish Research Council.
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Spetz, A.L., Andersson, M. (2011). Technology and Application Opportunities for SiC-FET Gas Sensors. In: Fleischer, M., Lehmann, M. (eds) Solid State Gas Sensors - Industrial Application. Springer Series on Chemical Sensors and Biosensors, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/5346_2011_5
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