Abstract
A short review is given of the status of MRAMs and FRAMs, summarizing both industry prototypeproduction and university research. This comparison seems especially timely since this month (July 2006)Freescale have announced the first commercial MRAM product (4 Mb), and the race is now fairly evenbetween the Samsung 32 Mb lead zirconate titanate FRAM and the Matsushita 4 Mb strontium bismuthtantalate FRAM.
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Acknowledgments
The author would like to acknowledge Prof. Lorenzo Pavesi and Paolo Bettotti at the University of Trento, Italy and Prof. Jann Linnros and Xavier Badel at the Royal institute of Technology (KTH) in Stockholm for providing porous substrates.
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© 2006 Springer-Verlag Berlin Heidelberg
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Scott, J.F. (2006). A Comparison of Magnetic Random Access Memories (MRAMs) and Ferroelectric Random Access Memories (FRAMs). In: Dalal, N.S., Bussmann-Holder, A. (eds) Ferro- and Antiferroelectricity. Structure and Bonding, vol 124. Springer, Berlin, Heidelberg. https://doi.org/10.1007/430_2006_043
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DOI: https://doi.org/10.1007/430_2006_043
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