Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K

Abstract

Thermal capacitive spectroscopy (DLTS, conductance) measurements have been performed on N-type GaAs Schottky barriers irradiated at 300 K and 77 K with one hundred keV protons at dose of some 10¹¹ p⁺/cm². At 300 K, the electron traps E₂, E₃, E₄, E₅, found also after electron irradiation, are created together with another trap (E_c−0.3 eV, σ_na = 3.10⁻¹⁴ cm²). At 77 K, the E₂ and E₃ defects are also created together with a new electron trap (E_C-0.26 eV, σ_na = 9.10⁻¹³ cm²) which anneals between 200 K and 300 K. We have also applied the new method DLOS (Deep Level Optical Spectroscopy) to the determination of the optical capture cross-section σ ^o_n (hη) of E₃ to determine the lattice relaxation effect of this centre.

Equipe de Recherche associée au C.N.R.S.