Abstract
A phase-field model is proposed to describe step-flow in epitaxial growth. In this model the motion of steps or island boundaries of discrete atomic layers on an epitaxial growing film is determined by the time evolution of an introduced phase-field variable. We use formally matched asymptotic expansion to determine the asymptotic limit of vanishing interfacial thickness and show the reduction to classical sharp interface models of Burton-Cabrera-Frank type with edge diffusion.
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© 2005 Birkhäuser Verlag Basel/Switzerland
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Rätz, A., Voigt, A. (2005). Edge Diffusion in Phase-Field Models for Epitaxial Growth. In: Voigt, A. (eds) Multiscale Modeling in Epitaxial Growth. ISNM International Series of Numerical Mathematics, vol 149. Birkhäuser Basel. https://doi.org/10.1007/3-7643-7343-1_8
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DOI: https://doi.org/10.1007/3-7643-7343-1_8
Publisher Name: Birkhäuser Basel
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