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Distributed Simulation of Silicon-Based Film Growth

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Parallel Processing and Applied Mathematics (PPAM 2001)

Part of the book series: Lecture Notes in Computer Science ((LNCS,volume 2328))

Abstract

We present a numerical scheme, grid generation and associated parallel algorithm for the simulation of silicon-based film growth in plasma enhanced chemical vapor deposition reactors. An MPI-based computing environment and advanced interactive software with graphic user interface, real-time visualization system and Web-based access were developed to provide distributed parallel multitask calculation and visualization on computer clusters. Analysis of system performance and cluster load-balancing indicates bottlenecks of the parallel implementation and ways to improve the algorithms.

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© 2002 Springer-Verlag Berlin Heidelberg

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Krzhizhanovskaya, V.V., Zatevakhin, M.A., Ignatiev, A.A., Gorbachev, Y.E., Sloot, P.M.A. (2002). Distributed Simulation of Silicon-Based Film Growth. In: Wyrzykowski, R., Dongarra, J., Paprzycki, M., Waśniewski, J. (eds) Parallel Processing and Applied Mathematics. PPAM 2001. Lecture Notes in Computer Science, vol 2328. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-48086-2_98

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  • DOI: https://doi.org/10.1007/3-540-48086-2_98

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-43792-5

  • Online ISBN: 978-3-540-48086-0

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