Abstract
Nonintrusive optical techniques for accurate sizing of discrete particles (or bubbles) suspended in continuous media have been studied for years and have reached, for some applications, an advanced stage of development. In contrast, a related problem of considerable importance that has received less attention is that of accurate characterization of _ne particles or other features/defects on and under surfaces. This capability is much needed in the _elds of semiconductor and integrated circuit fabrication, digital storage media manufacturing, and for research on contamination of optical components for both earth- and space-based applications. In this presentation, we show the development of theoretical based scattering modeling and comparisons between our experimental and theoretical studies of light scattering by features on and under surfaces relevant to semiconductor wafer inspection. The experimental work shown here involves measurements of angle-resolved light scattering signatures (for 64 scattering angles) from an individual spherical particle 0.482 μm in diameter on a bare Si wafer. Experiments and predictions show good agreement, and the models are being used in predicting the performance of wafer scanners for various experimental conditions and for assisting in the design of future-generation surface defect characterization instruments.
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Nebeker, B.M., Hirleman, E.D. (2000). Light Scattering by Particles and Defects on Surfaces: Semiconductor Wafer Inspection. In: Moreno, F., González, F. (eds) Light Scattering from Microstructures. Lecture Notes in Physics, vol 534. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-46614-2_13
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DOI: https://doi.org/10.1007/3-540-46614-2_13
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