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Nanoscale Spectroscopy and Its Applications to Semiconductor Research pp 61–73Cite as

Development of CL for Semiconductor Research, Part III: Study of Degradation Mechanisms in Compound Semiconductor-Based Devices by SEM-CL

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Part of the book series: Lecture Notes in Physics ((LNP,volume 588))

Abstract

The advantages offered by the depth resolved spectral analysis of the CL technique are presented. In particular, GaAs-based heterojunction bipolar transistors and and InP-based high electron mobility transistors are studied to respectively reveal Be outdiffusion from the base and kink phenomena in the I-V characteristics after bias aging. GaAs-based solar cells are also investigated to show the correlation between dislocations and impurity gettering. Finally the limits of the technique are briefly discussed.

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Author information

Authors and Affiliations

  1. CNR-MASPEC, Parco Area delle Scienze 37a, 43010, Parma, Italy

    G. Salviati

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  1. G. Salviati
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Editor information

Editors and Affiliations

  1. NTT Basic Research Laboratories, 3-1,Morinosato Wakamiya, 243-0198, Atsugi-shi Kanagawa, Japan

    Yoshio Watanabe

  2. Istituto MASPEC, Parco Area delle Science 37/A, 43010, Parma, Italy

    Giancarlo Salviati

  3. Sincrotrone Trieste, AREA Science Park Strada Statale 14, Km 163,5, 34012, Trieste, Basovizza, Italy

    Stefan Heun

  4. Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, 152-8551, Tokyo, Japan

    Naoki Yamamoto

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© 2002 Springer-Verlag Berlin Heidelberg

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Salviati, G. (2002). Development of CL for Semiconductor Research, Part III: Study of Degradation Mechanisms in Compound Semiconductor-Based Devices by SEM-CL. In: Watanabe, Y., Salviati, G., Heun, S., Yamamoto, N. (eds) Nanoscale Spectroscopy and Its Applications to Semiconductor Research. Lecture Notes in Physics, vol 588. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45850-6_6

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  • DOI: https://doi.org/10.1007/3-540-45850-6_6

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-43312-5

  • Online ISBN: 978-3-540-45850-0

  • eBook Packages: Springer Book Archive

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