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Development of CL for Semiconductor Research, Part II: Cathodoluminescence Study of Semiconductor Nanoparticles and Nanostructures Using Low-Electron-Beam Energies

  • T. Sekiguchi
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 588)

Abstract

We have developed a cathodoluminescence (CL) system operating under low electron beam energies using thermal field-emission gun. Since a low energy electron beam strongly reduces the electron range, the spatial resolution of our CL system is about 100 nm in the actual operation at 3 kV. Thus, it is appropriate for the optical characterization of semiconductor nanoparticles and nanostructures. In this article, we demonstrate the usefulness of low energy CL system, by introducing the study of ZnO nanoparticles and GaAs/AlGaAs quantum dot structures.

Keywords

Secondary Electron Image Electron Beam Energy Semiconductor Research Electron Range Droplet Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    K. Kanaya and S. Okayama, J. Phys. D 5 (1972) 43.CrossRefGoogle Scholar
  2. 2.
    K. Wada, A. Kozen, H. Fushimi, and N. Inoue, Jpn. J. Appl. Phys. 27 (1988) L1952.CrossRefGoogle Scholar
  3. 3.
    T. Sekiguchi and K. Sumino, Rev. Sci. Instrum. 66 (1995) 4277.CrossRefGoogle Scholar
  4. 4.
    T. Sekiguchi and H. S. Leipner, Appl. Phys. Lett. 67 (1995) 3777.CrossRefGoogle Scholar
  5. 5.
    K. Nishio, T. Isshiki, M. Kitano, and M. Shiojiri, Phil. Mag. A 76 (1997) 889.CrossRefGoogle Scholar
  6. 6.
    M. Kitano, T. Hamabe, S. Maeda, and T. Okabe, J. Cryst. Growth 102 (1990) 965.CrossRefGoogle Scholar
  7. 7.
    T. Sekiguchi, Mat. Res. Soc. Symp. Proc. 588 (2000) 75.Google Scholar
  8. 8.
    K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallet, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79 (1996) 7983.CrossRefGoogle Scholar
  9. 9.
    N. Ohashi, T. Nakata, T. Sekiguchi, H. Hosono, M. Mizuguchi, T. Tsurumi, J. Tanaka, and H. Haneda, Jpn. J. Appl. Phys. 38 (1999) L113.CrossRefGoogle Scholar
  10. 10.
    N. Koguchi, S. Takahashi, and T. Chikyow, J. Crystal Growth 111 (1991) 688.CrossRefGoogle Scholar
  11. 11.
    N. Koguchi and K. Ishige, Jpn. J. Appl. Phys. 32 (1993) 2052.CrossRefGoogle Scholar
  12. 12.
    K. Watanabe, N. Koguchi, and Y. Goto, Jpn. J. Appl. Phys. 39 (2000) L79.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • T. Sekiguchi
    • 1
  1. 1.Nanomaterials LaboratoryNational Institute for Materials ScienceTsukubaJapan

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