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Development of Cathodoluminescence (CL) for Semiconductor Research, Part I: TEM-CL Study of Microstructures and Defects in Semiconductor Epilayers

  • N. Yamamoto
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 588)

Abstract

Cathodoluminescence technique combined with transmission electron microscopy (TEM-CL) is a powerful tool to study optical properties of semiconductor materials, because it provides a high spatial resolution and enables us to directly compare between CL images and TEM images to assign the structural origin of the luminescence. In this article we present some applications of the technique to the studies of microstructures and defects in semiconductor epilayers, i.e., dislocations in GaN, defects concerning with the Y0 emission in ZnSe and the structural defects concerned with the linear features in monochromatic CL images of InGaAs epilayers.

Keywords

Peak Wavelength Thin Specimen Epitaxial Lateral Overgrowth ZnSe Layer Semiconductor Research 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • N. Yamamoto
    • 1
  1. 1.Department of PhysicsTokyo Institute of TechnologyMeguro-ku TokyoJapan

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