Imaging of Zero-Dimensional States in Semiconductor Nanostructures Using Scanning Tunneling Microscopy

  • K. Kanisawa
  • M. J. Butcher
  • Y. Tokura
  • H. Yamaguchi
  • Y. Hirayama
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 588)


The local density of states (LDOS) was characterized at the surface of the InAs thin film epitaxially grown on a GaAs(111)A substrate using low-temperature Scanning tunneling microscopy (LT-STM). The differential conductance (dI/dV) images show bias-dependent standing waves of the two-dimensional (2D) electronic states. Friedel oscillations, caused by the scattering and interference of 2D electrons in the surface accumulation layer, were observed. The dI/dV images also show a LDOS distribution in small InAs nanostructures. Calculations reveal that the LDOS distribution in each dI/dV image corresponds to a discrete zero-dimensional (0D) state in the nanostructures.


Scanning Tunneling Microscopy Scanning Tunneling Microscopy Image Stack Fault Tetrahedron Defect Array Surface State Band 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • K. Kanisawa
    • 1
  • M. J. Butcher
    • 1
    • 2
  • Y. Tokura
    • 1
  • H. Yamaguchi
    • 1
  • Y. Hirayama
    • 1
    • 3
  1. 1.NTT Basic Research LaboratoriesNTT CorporationKanagawaJapan
  2. 2.School of Physics and AstronomyUniversity of NottinghamNottinghamUK
  3. 3.CREST-JSTSaitamaJapan

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