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Imaging of Zero-Dimensional States in Semiconductor Nanostructures Using Scanning Tunneling Microscopy

  • K. Kanisawa
  • M. J. Butcher
  • Y. Tokura
  • H. Yamaguchi
  • Y. Hirayama
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 588)

Abstract

The local density of states (LDOS) was characterized at the surface of the InAs thin film epitaxially grown on a GaAs(111)A substrate using low-temperature Scanning tunneling microscopy (LT-STM). The differential conductance (dI/dV) images show bias-dependent standing waves of the two-dimensional (2D) electronic states. Friedel oscillations, caused by the scattering and interference of 2D electrons in the surface accumulation layer, were observed. The dI/dV images also show a LDOS distribution in small InAs nanostructures. Calculations reveal that the LDOS distribution in each dI/dV image corresponds to a discrete zero-dimensional (0D) state in the nanostructures.

Keywords

Scanning Tunneling Microscopy Scanning Tunneling Microscopy Image Stack Fault Tetrahedron Defect Array Surface State Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Ph. Avouris, I.-W. Lyo, R.E. Walkup, Y. Hasegawa: J. Vac. Sci. Technol. B 12, 1447 (1994)CrossRefGoogle Scholar
  2. 2.
    J. Li, W.-D. Schneider, R. Berndt, S. Crampin: Phys. Rev. Lett. 80, 3332 (1998)CrossRefGoogle Scholar
  3. 3.
    M.F. Crommie, C.P. Lutz, D.M. Eigler: Science 262, 218 (1993)CrossRefGoogle Scholar
  4. 4.
    E.J. Heller, M.F. Crommie, C.P. Lutz, D.M. Eigler: Nature 369, 464 (1994)CrossRefGoogle Scholar
  5. 5.
    T. Yokoyama, K. Takayanagi: Phys. Rev. B 59, 12232 (1999)CrossRefGoogle Scholar
  6. 6.
    K. Kanisawa, M. J. Butcher, H. Yamaguchi, and Y. Hirayama: ‘Imaging of Friedel oscillations at epitaxially grown InAs(111)A surfaces usingscanningtunnelingmicroscopy’. In: Proceedings of the 25th International Conference on the Physics of Semiconductors, Osaka, Japan, 2000, ed. by N. Miura, T. Ando, Springer Proceedings in Physics Vol. 87 (Springer Verlag, Berlin, Heidelberg, 2001), Part I, pp. 427–430.Google Scholar
  7. 7.
    K. Kanisawa, M.J. Butcher, H. Yamaguchi, Y. Hirayama: Phys. Rev. Lett. 86, 3384 (2001)CrossRefGoogle Scholar
  8. 8.
    L. Ö. Olsson, L. Ilver, J. Kanski, P.O. Nilsson, C.B.M. Andersson, U.O. Karlsson, M.C. Håkansson: Phys. Rev. B 53, 4734 (1996)CrossRefGoogle Scholar
  9. 9.
    H. Yamaguchi, M.R. Fahy, B.A. Joyce: Appl. Phys. Lett. 69, 776 (1996)CrossRefGoogle Scholar
  10. 10.
    G. Hörmandinger: Phys. Rev. B 49, 13897 (1994)CrossRefGoogle Scholar
  11. 11.
    J. Li, W.-D. Schneider, R. Berndt: Phys. Rev. B 56, 7656 (1997)CrossRefGoogle Scholar
  12. 12.
    K. Kobayashi: Phys. Rev. B 53, 11091 (1996)CrossRefGoogle Scholar
  13. 13.
    D. Hull, D. J. Bacon: Introduction to Dislocations (Pergamon Press, Oxford, 1984)Google Scholar
  14. 14.
    L.H. Kuo, L. Salamanca-Riba, B.J. Wu, G.M. Haugen, J.M. Depuydt, G. Hoffer, H. Cheng: J. Vac. Sci. Technol. B 13, 1694 (1995)CrossRefGoogle Scholar
  15. 15.
    J. Nakamura, T. Mishima, M. Masui, M. Sawayanagi, S.-P. Cho, M. Nishizawa, T. Eguchi, T. Osaka: J. Vac. Sci. Technol. B 16, 2426 (1998)CrossRefGoogle Scholar
  16. 16.
    Yu.A. Osip’yan, V.F. Petrenko, A.V. Zaretskii, R.W. Whitworth: Adv. Phys. 35, 115 (1986)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • K. Kanisawa
    • 1
  • M. J. Butcher
    • 1
    • 2
  • Y. Tokura
    • 1
  • H. Yamaguchi
    • 1
  • Y. Hirayama
    • 1
    • 3
  1. 1.NTT Basic Research LaboratoriesNTT CorporationKanagawaJapan
  2. 2.School of Physics and AstronomyUniversity of NottinghamNottinghamUK
  3. 3.CREST-JSTSaitamaJapan

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