Growth and Characterization of Ge Nanostructures on Si(111)

  • F. Rosei
  • N. Motta
  • A. Sgarlata
  • A. Balzarotti
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 588)


The study of growth and evolution of Ge/Si(111) islands by STM and AFM is presented and discussed. The coexistence of strained and relaxed islands in agreement with theoretical equilibrium calculations is reported. The formation of a trench around ripened island due to selective depletion of the wetting layer is observed for the first time in the case of Ge/Si(111) islands. The presence of misfit dislocations at the edges of the ripened islands is associated to the promotion of an atomic current from higher strain island regions. The Ge atoms move from the top of the island centre to the base thereby leading to a rounding of the island shape and to a decrease of the aspect ratio.


Selective Depletion Island Shape Atomic Current Island Height Local Strain Energy Density 
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  1. 1.
    T.I. Kamins, E.C. Carr, R.S. Williams and S.J. Rosner, J. Appl. Phys. 81 p211 (1997).CrossRefGoogle Scholar
  2. 2.
    T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg and R.S. Williams, J. Appl. Phys. 85 p1159 (1999).CrossRefGoogle Scholar
  3. 3.
    U. Köhler, O. Jusko, G. Pietsch, B. Müller and M. Henzler, Surf. Sci. 248 p321 (1991).CrossRefGoogle Scholar
  4. 4.
    S.K. Theiss, D.M. Chen and J.A. Golovchenko, Appl. Phys. Lett. 66 p448 (1995).CrossRefGoogle Scholar
  5. 5.
    T. Fukuda, Surf. Sci. 351 p103 (1996).CrossRefGoogle Scholar
  6. 6.
    B. Voigtländer and M. Zinner, Appl. Phys. Lett. 63 p3055 (1993).CrossRefGoogle Scholar
  7. 7.
    M. Zinke Allmang, Thin Solid Films 346 p1 (1999).CrossRefGoogle Scholar
  8. 8.
    N. Motta, A. Sgarlata, R. Calarco, Q. Nguyen, F. Patella, J. Castro-Cal, A. Balzarotti and M. De Crescenzi, Surf. Sci. 406 p254 (1998).CrossRefGoogle Scholar
  9. 9.
    G. Capellini, N. Motta, A. Sgarlata and R. Calarco, Solid State Comm. 112 p145 (1999).CrossRefGoogle Scholar
  10. 10.
    A. Sgarlata, F. Rosei, M. Fanfoni, N. Motta and A. Balzarotti, STM/AFM study of Ge Quantum Dots grown on Si(111), IEEE Proceedings of the XI Semiconducting and Insulating Materials Conference (SIMC), Canberra (Australia), 3–7 July 2000, p. 228.Google Scholar
  11. 11.
    G. Medeiros-Ribeiro, A.M. Bratkovski, T.I. Kamins, D.A.A. Ohlberg and R.S. Williams, Science 279 p353 (1998).CrossRefGoogle Scholar
  12. 12.
    F.M. Ross, R.M. Tromp and M.C. Reuter, Science 286 p193 (1999).CrossRefGoogle Scholar
  13. 13.
    X.Z. Liao, J. Zou, D.J.H. Cockayne, Z.M. Jiang, X. Wang and R. Leon, Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands, Appl. Phys. Lett. 77 p1304 (2000).CrossRefGoogle Scholar
  14. 14.
    S.A. Chaparro, Y. Zhang and J. Drucker, Strain relief via trenchformation in Ge/Si(001) islands, Appl. Phys. Lett. 76 p3534 (2000).CrossRefGoogle Scholar
  15. 15.
    Zhang, K. Sumitomo, H. Omi and T. Ogino, Influence of the Si(113) anisotropy on Ge nanowire formation and related island shape transition, Surf. Sci., in press.Google Scholar
  16. 16.
    H. Omi and T. Ogino, Self-assembled Ge nanowires grown on Si(113), Appl. Phys. Lett. 71 p2163 (1997).CrossRefGoogle Scholar
  17. 17.
    H. Omi and T. Ogino, Self-organization of Ge islands on high-index Si substrates, Phys. Rev. B 59 p7521 (1999).CrossRefGoogle Scholar
  18. 18.
    W. Seifert, N. Carlsson, J. Johansson, M. Pistol and L. Samuelson, J. Cryst. Growth 170 p39 (1997).CrossRefGoogle Scholar
  19. 19.
    H.T. Johnson and L.B. Freund, J. Appl. Phys. 81 p6083 (1997).CrossRefGoogle Scholar
  20. 20.
    F. Rosei, N. Motta, A. Sgarlata and A. Balzarotti, to be published.Google Scholar
  21. 21.
    F. Arciprete, A. Balzarotti, M. Fanfoni, N. Motta, F. Patella and A. Sgarlata, Morphology of self-assembled quantum dots of InAs on GaAs(001) and Ge on Si(111), Recent Res. Devel. Vacuum Sci. & Tech. 3, 71 (2001).Google Scholar
  22. 22.
    I. Daruka and A.L. Barabasi, Phys. Rev. Lett. 79 p3708 (1997).CrossRefGoogle Scholar
  23. 23.
    I. Kegel et al., Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled InAs/GaAs Quantum Dots, Phys. Rev. Lett. 85 p1694 (2000).CrossRefGoogle Scholar
  24. 24.
    P.B. Joyce et al., Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying, Phys. Rev. B 58 R15981 (1998).CrossRefGoogle Scholar
  25. 25.
    K. Nakajima, A. Konishi and K. Kimura, Direct Observation of Intermixing at Ge/Si(001) Interfaces by High-Resolution Rutherford Bckscattering Spectroscopy, Phys. Rev. Lett. 83 p1802 (1999).CrossRefGoogle Scholar
  26. 26.
    S.A. Chaparro, J. Drucker, Y. Zhang, D. Chandrasekhar, M.R. McCartney and D.J. Smith, Strain-Driven Alloying in Ge/Si(001) Coherent Islands, Phys. Rev. Lett. 83 p1199 (1999).CrossRefGoogle Scholar
  27. 27.
    G. Patriarche et al., Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition, Appl. Phys. Lett. 77 p370 (2000).CrossRefGoogle Scholar
  28. 28.
    F. Boscherini, G. Capellini, L. Di Gaspare, F. Rosei, N. Motta and S. Mobilio, Appl. Phys. Lett. 76 p682 (2000).CrossRefGoogle Scholar
  29. 29.
    F. Rosei et al., Thin Solid Films 369 p29 (2000).CrossRefGoogle Scholar
  30. 30.
    F. Boscherini, G. Capellini, L. Di Gaspare, M. de Seta, F. Rosei, A. Sgarlata, N. Motta and S. Mobilio, Thin Solid Films 380 p173 (2000).CrossRefGoogle Scholar
  31. 31.
    F. Boscherini, F. Rosei, G. Capellini, N. Motta and A. Sgarlata, to be published.Google Scholar
  32. 32.
    G. Capellini, L. Di Gaspare, F. Evangelisti and E. Palange, Appl. Phys. Lett. 70 p493 (1997).CrossRefGoogle Scholar
  33. 33.
    D.J. Bottomley, The physical origin of InAs quantum dots on GaAs(001), Appl. Phys. Lett. 72 p783 (1998).CrossRefGoogle Scholar
  34. 34.
    D.J. Bottomley, Formation and shape of InAs Nanoparticles on GaAs surfaces: Fundamental Thermodynamics, Jpn. J. Appl. Phys. 39 p4604 (2000).CrossRefGoogle Scholar
  35. 35.
    E. Tosatti, private communication.Google Scholar
  36. 36.
    G. Wedler et al., Stress and Relief of Misfit Strain of Ge/Si(001), Phys. Rev. Lett. 80 p2382 (1998).CrossRefGoogle Scholar
  37. 37.
    P. Raiteri, private communication.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • F. Rosei
    • 1
    • 2
  • N. Motta
    • 1
  • A. Sgarlata
    • 1
  • A. Balzarotti
    • 1
  1. 1.Dipartimento di Fisica and Unità INFMUniversità di Roma Tor VergataRomaItaly
  2. 2.Institute of Physics and Astronomy and Center for Atomic Scale Materials PhysicsUniversity of AarhusC AarhusDenmark

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