Abstract
A combination of scanning tunneling microscopy and spectroscopy has been employed to directly image the charge density of the confined electronic states of In0.5Ga0.5As quantum dots produced by epitaxial Stranski-Krastinov growth. Room temperature measurements have been made of intact, uncapped quantum dots, in a planar geometry. The tunneling current images have been compared with calculated tunneling current profiles and the observed tunneling current contrast has been associated with the localized quantum dot states and the delocalized wetting layer states.
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Johal, T.K. et al. (2002). Direct Imaging of InGaAs Quantum Dot States by Scanning Tunneling Spectroscopy. In: Watanabe, Y., Salviati, G., Heun, S., Yamamoto, N. (eds) Nanoscale Spectroscopy and Its Applications to Semiconductor Research. Lecture Notes in Physics, vol 588. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45850-6_21
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DOI: https://doi.org/10.1007/3-540-45850-6_21
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