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Direct Imaging of InGaAs Quantum Dot States by Scanning Tunneling Spectroscopy

  • T. K. Johal
  • R. Rinaldi
  • A. Passaseo
  • R. Cingolani
  • A. Vasanelli
  • R. Ferreira
  • G. Bastard
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 588)

Abstract

A combination of scanning tunneling microscopy and spectroscopy has been employed to directly image the charge density of the confined electronic states of In0.5Ga0.5As quantum dots produced by epitaxial Stranski-Krastinov growth. Room temperature measurements have been made of intact, uncapped quantum dots, in a planar geometry. The tunneling current images have been compared with calculated tunneling current profiles and the observed tunneling current contrast has been associated with the localized quantum dot states and the delocalized wetting layer states.

Keywords

Scanning Tunneling Microscopy Tunneling Current Occupied State Unoccupied State Scan Tunneling Spectroscopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • T. K. Johal
    • 1
  • R. Rinaldi
    • 1
  • A. Passaseo
    • 1
  • R. Cingolani
    • 1
  • A. Vasanelli
    • 2
  • R. Ferreira
    • 2
  • G. Bastard
    • 2
  1. 1.INFM-Unita di Lecce, Dipartimento di Ingegneria dell’InnovazioneUniversita di LecceLecceItaly
  2. 2.Laboratoire de Physique de la Matiere Condensee de l’Ecole Normale SuperieureParisFrance

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