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Cross-Sectional Photoemission Spectromicroscopy of Semiconductor Heterostructures

  • F. Barbo
  • M. Bertolo
  • A. Bianco
  • G. Cautero
  • R. Cimino
  • S. Fontana
  • A. Franciosi
  • T. K. Johal
  • S. La Rosa
  • D. Orani
  • M. Piccin
  • R. C. Purandare
  • S. Rubini
  • N. Svetchnikov
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 588)

Abstract

A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces is direct determination of heterojunction parameters by measuring the device in cross section. We present here results on p-n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this novel technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential profile across Al/GaAs Schottky junctions.

Keywords

Depletion Layer Valence Band Maximum Photoemission Spectrum Static Dielectric Constant Radiation Spot 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • F. Barbo
    • 1
  • M. Bertolo
    • 1
  • A. Bianco
    • 1
  • G. Cautero
    • 1
  • R. Cimino
    • 3
  • S. Fontana
    • 1
  • A. Franciosi
    • 2
  • T. K. Johal
    • 1
    • 2
  • S. La Rosa
    • 1
  • D. Orani
    • 2
  • M. Piccin
    • 2
  • R. C. Purandare
    • 1
  • S. Rubini
    • 2
  • N. Svetchnikov
    • 1
  1. 1.Sincrotrone TriesteTriesteItaly
  2. 2.Laboratorio Nazionale TASC-INFMTriesteItaly
  3. 3.INFN - Laboratori Nazionali di FrascatiFrascatiItaly

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