Abstract
In previous papers we have presented a very accurate model that handles the generation and propagation of glitches, which makes an important headway in logic timing simulation. This model is called Delay Degradation Model (DDM). Characterizing DDM completely also implies the characterization of the normal propagation delay. In this paper, we propose a simple heuristic model that includes its dependence on the output load and the input transition time. We have tested this model and found a mean deviation lower than 4%. Also, we present a characterization process for this model that is fully integrated into AUTODDM without affecting the total simulation time needed to characterize a standard cell.
This work has been partially supported by the MCYT MODEL project TIC 2000- 1350 and MCYT VERDI project TIC 2002-2283 of the Spanish Government.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Bisdounis, L., Nikolaidis, S., Koufopavlou, O.: Analytical transient response and propagation delay evaluation of the CMOS inverter for short-channel devices. IEEE Journal of Solid-State Circuits 33(2) (February 1998) 302–306
Daga, J. M., Auvergne, D.: A comprehensive delay macro modeling for submicrometer CMOS logics. IEEE Journal of Solid-State Circuits 34(1) (January 1999)
Kayssi, A. I., Sakallah, K. A., Mudge, T. N.: The impact of signal transition time on path delay computation. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 40(5) (May 1993) 302–309
Auvergne, D., Azemard, N., Deschacht, D., Robert, M.: Input waveform slope effects in CMOS delays. IEEE Journal of Solid-State Circuits 25(6) (December 1990) 1588–1590
Melcher, E., Rothig, W., Dana, M.: Multiple input transitions in CMOS gates. Microprocessing and Microprogramming 35, North Holland, (1992) 683–690
Bellido-Diaz, M. J., Juan-Chico, J., Acosta, A. J., Valencia, M., Huertas, J. L.: Logical modelling of delay degradation effect in static CMOS gates. IEE Proc. Circuits Devices and Systems 147(2) (April 2000) 107–117
Juan-Chico, J., Ruiz-de-Clavijo, P., Bellido, M. J., Acosta, A. J., Valencia, M.: Inertial and degradation delay model for CMOS logic gates. In Proc. IEEE International Symposium on Circuits and Systems (ISCAS), Geneva, (May 2000) I-459–462
Juan-Chico, J., Ruiz-de-Clavijo, P., Bellido, M. J., Acosta, A. J., Valencia, M.: Degradation delay model extension to CMOS gates. In Proc. Power and Timing Modelling, Optimization and Simulation (PATMOS) (September 2000) 149–158
Juan-Chico, J., Bellido, M. J., Ruiz-de-Clavijo, P., Baena, C., Valencia, M.: AUTODDM: AUTOmatic characterization tool for the Delay Degradation Model. In Proc. 8th IEEE International Conference on Electronics, Circuits and Systems (ICECS), Malta, (September 2001) 1631–1634
Ruiz-de-Clavijo, P., Juan, J., Bellido, M. J., Acosta, A. J., Valencia, M.: HALOTIS: High Accuracy Logic Timing Simulator with Inertial and Degradation Delay Model. Design, Automation and Test in Europe (DATE) Conference and Exhibition, Munich (Germany), (March 2001)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2002 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Millán, A., Juan, J., Bellido, M.J., Ruiz-de-Clavijo, P., Guerrero, D. (2002). Characterization of Normal Propagation Delay for Delay Degradation Model (DDM). In: Hochet, B., Acosta, A.J., Bellido, M.J. (eds) Integrated Circuit Design. Power and Timing Modeling, Optimization and Simulation. PATMOS 2002. Lecture Notes in Computer Science, vol 2451. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45716-X_48
Download citation
DOI: https://doi.org/10.1007/3-540-45716-X_48
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-44143-4
Online ISBN: 978-3-540-45716-9
eBook Packages: Springer Book Archive