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Strong Charge Fluctuations in the Single-Electron Box: A Quantum Monte Carlo Analysis

  • C. P. Herrero
  • G. Schön
  • A. D. Zaikin
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 547)

Abstract

Path-integral Monte Carlo simulations have been employed to study strong electron tunneling in the single-electron box (a small metallic island coupled to an electrode by a tunnel junction). Results will be presented for the free energy of this system, as well as for the average charge on the island, as a function of the tunneling strength, the temperature, and an external bias voltage. In much of the parameter range an extrapolation to the ground state (T = 0) is possible. Our results for the effective charging energy for strong tunneling will be compared with earlier theoretical predictions and Monte Carlo simulations.

Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • C. P. Herrero
    • 1
    • 2
  • G. Schön
    • 1
  • A. D. Zaikin
    • 1
    • 3
  1. 1.Institut für Theoretische FestkörperphysikUniversität KarlsruheKarlsruheGermany
  2. 2.C.S.I.C., CantoblancoInstituto de Ciencia de MaterialesMadridSpain
  3. 3.Lebedev Physics InstituteMoscowRussia

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