Abstract
Weakly coupled semiconductor superlattices represent a non-linear system, which exhibits tunable current self-oscillations and chaos. The non-linearity originates from resonant tunneling between two-dimensional subbands in adjacent wells. The current oscillations are due to a recycling motion of a charged monopole over several superlattice periods. The charged monopole appears, because the nonlinearity of the system in connection with a large carrier density results in the formation of electric-field domains in these systems. The monopole separates the different field regions. Current self-oscillations have been observed in doped and undoped, photoexcited superlattices up to frequencies of several GHz. A single period of the current oscillations contains additional spikes with a frequency more than one order of magnitude above the fundamental oscillation frequency. These spikes are a signature of the well-to-well hopping of the monopole. The fundamental oscillation frequency can be varied over more than two orders of magnitude by changing the applied voltage within a single sample. For different samples, a variation of the barrier width by a factor of three has resulted in a change of the fundamental oscillation frequency by more than three orders of magnitude. The frequency scales with the resonant coupling of the subbands in adjacent wells. In several samples, current self-oscillations have been observed up to room temperature. Recently, undoped superlattices have been used to investigate the carrier density dependence of the boundary between static and dynamic domain formation by varying the photoexcitation intensity. With increasing carrier density, the current oscillations disappear via a supercritical Hopf bifurcation, a subcritical Hopf bifurcation, and a homoclinic connection. The chaotic behavior of such a system, which was predicted through calculations within a simple drift-diffusion model, has also been investigated. The bifurcation diagram of the power spectra under application of an external ac voltage shows the well-known route to chaos via alternating windows of frequency locking and quasi-periodicity. Real-time current traces have been used to construct Poincaré sections, which support this interpretation. However, for other dc voltages, the route to chaos can become much more complex. Recently, the multi-fractal dimension of the chaotic attractors has been determined as a function of the dc voltage using the experimentally derived Poincaré sections.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Bonilla L. L. (1995): in Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices, edited by F.-J. Niedernostheide (Springer-Verlag, Berlin), Chap. 1
Bonilla L.L., Galán J., Cuesta J. A., Martínez F. C., & Molera J. M. (1994): Phys. Rev. B 50, 8644
Bulashenko O. M., and Bonilla L. L. (1995): Phys. Rev. B 52, 7849
Bulashenko O. M., García M. J., & Bonilla L. L. (1996): Phys. Rev. B 53, 10008
Bulashenko O. M., Luo K. J., Grahn H. T., Ploog K. H., & Bonilla L. L. (1999): Phys. Rev. B 60, 5694
Esaki L., and Tsu R. (1970): IBM J. Res. Develop. 14, 61
Grahn H. T. (1995): Semiconductor Superlattices (World Scientific, Singapore)
Grahn H. T. (1998): in Hot Electrons in Semiconductors, Physics and Devices, edited by N. Balkan (Clarendon Press, Oxford), pp. 357–381
Grahn H., Kastrup J., Ploog K., Bonilla L., Galán J., Kindelan M., & Moscoso M. (1995): Jpn. J. Appl. Phys. 34, 4526
Grahn H. T., Kastrup J., Klann R., Ploog K. H., & Asai H. (1996): in Proceed. of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore), p. 1671
Hosoda M., Mimura H., Ohtani N., Tominaga K., Watanabe T., Fujiwara K., & Grahn H. T. (1996): Appl. Phys. Lett. 69, 500
Kantelhardt J. W., Grahn H. T., Ploog K. H., Moscoso M., Perales A., & Bonilla L. L. (1997): Phys. Status Solidi B 204, 500
Kastrup J., Klann R., Grahn H. T., Ploog K., Bonilla L. L., Galán J., Kindelan M., Moscoso M., & Merlin R. (1995): Phys. Rev. B 52, 13761
Kastrup J., Hey R., Ploog K. H., Grahn H. T., Bonilla L. L., Kindelan M., Moscoso M., Wacker A., & Galán J. (1997): Phys. Rev. B 55, 2476
Luo et al. 1998a Luo K. J., Grahn H. T., Ploog K. H., & Bonilla L. L. (1998): Phys. Rev. Lett. 81, 1290
Luo et al. 1998b Luo K. J., Grahn H. T., Teitsworth S. W., & Ploog K.H. (1998): Phys. Rev. B 58, 12613
Luo K. J., Teitsworth S. W., Kostial H., Grahn H. T., & Ohtani N. (1999): Appl. Phys. Lett. 74, 3845
Moscoso M., Bonilla L. L., & Galán J. (1999): in Proceed. the 24th International Conference on the Physics of Semiconductors edited by D. Gershoni (World Scientific, Singapore), V-C-14 (0524.pdf)
Ohtani, N., Hosoda, M., & Grahn H. T. (1997): Appl. Phys. Lett. 70, 375
Ohtani et al. (1998a) Ohtani N., Egami N., Fujiwara K., & Grahn H. T. (1998): Solid-State Electron. 42, 1509
Ohtani et al. (1998b) Ohtani N., Egami N., Grahn H. T., Ploog K. H., & Bonilla L. L. (1998): Phys. Rev. B 58, R7528
Ohtani et al. (1998c) Ohtani N., Egami N., Grahn H. T., & Ploog K. H. (1998): Physica B 249–251, 878
Patra M., Schwarz G., & Schöll E. (1998): Phys. Rev. B 57, 1824
Prengel F., Patra M., Schwarz G., & Schöll E. (1997): in Proceed. of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore), p. 1667.
Schöll E., Schwarz G., Patra M., & Wacker A. (1996): in Hot Carriers in Semiconductors, edited by K. Hess, J. P. Leburton, and U. Ravaioli (Plenum Press, New York), p. 177
Wacker A. (1998): in Theory of Transport Properties of Semiconductor Nanostructures, edited by E. Schöll (Chapman and Hall, London), Chap. 10
Wacker A., and Jauho A. P. (1998): Phys. Rev. Lett. 80, 369
Zhang et al. (1996a) Zhang Y., Klann R., Ploog K. H., & Grahn H. T. (1996): Appl. Phys. Lett. 69, 1116
Zhang et al. (1996b) Zhang Y., Kastrup J., Klann R., Ploog K. H., & Grahn H. T. (1996): Phys. Rev. Lett. 77, 3001
Zhang et al. (1997a) Zhang Y., Klann R., Grahn H. T., & Ploog K. H. (1997): Superlattices Microstruct. 21, 565
Zhang et al. (1997b) Zhang Y., Klann R., Ploog K. H., & Grahn H. T. (1997): Appl. Phys. Lett. 70, 2825
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1999 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Grahn, H.T. (1999). Current Self-Oscillations and Chaos in Semiconductor Superlattices. In: Reguera, D., Rubí, J.M., Platero, G., Bonilla, L.L. (eds) Statistical and Dynamical Aspects of Mesoscopic Systems. Lecture Notes in Physics, vol 547. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45557-4_15
Download citation
DOI: https://doi.org/10.1007/3-540-45557-4_15
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-67478-8
Online ISBN: 978-3-540-45557-8
eBook Packages: Springer Book Archive