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Phonon Fine Structure in the 1/f Noise of Metals, Semiconductors and Semiconductor Devices

  • Mihai N. Mihaila
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 550)

Abstract

Results pointing to phonon participation in the 1/f noise of metals, semiconductors and semiconductor devices are presented. Afine structure corresponding to both bulk and surface phonons is shown to exist in the 1/f noise of different solid-state physical systems. It is described how Phonon Density Of States (PDOS) superposition method can be used to identify surface and bulk equilibrium atomic motions as microscopic 1/f noise sources. Aclose connection between the 1/f noise parameter and PDOS or Eliashberg function is suggested. Examples proving that the temperature dependence of the 1/f noise parameter is the image of the lattice vibration spectrum are given for both metals and semiconductors. Consequently, a simple connection between the activation energy distribution and PDOS is revealed and lattice anharmonicity appears to naturally affect the frequency exponent.

Keywords

Noise Intensity Gallium Arsenide Noise Data Noise Parameter Inelastic Neutron Scattering 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • Mihai N. Mihaila
    • 1
  1. 1.Institute of MicrotechnologyBucharestRomania

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