Abstract
The performance characterization and optimization of logic circuits under rapid process migration is one of the big challenges of nowadays submicron CMOS technologies. This characterization must be robust on a wide design space in predicting the performance evolution of designs. In this paper we present a second generation of analytical modeling of delay performance, considering speed carrier desaturation induced non linear variation of delay, I/O coupling, load and input ramp effects. A first model is deduced for inverters and then extended to logic gates through a reduction protocol of the serial transistor array. Validations are given, on a 0.18μm process, by comparing values of simulated (HSPICE) and calculated delay for different configurations of inverters and gates.
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Rezzoug, M., Maurine, P., Auvergne, D. (2000). Second Generation Delay Model for Submicron CMOS Process. In: Soudris, D., Pirsch, P., Barke, E. (eds) Integrated Circuit Design. PATMOS 2000. Lecture Notes in Computer Science, vol 1918. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45373-3_16
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DOI: https://doi.org/10.1007/3-540-45373-3_16
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