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Stability of Magnetic Tunnel Junctions

  • Günter Reiss
  • Hubert Brückl
  • Jan Schmalhorst
  • Andy Thomas
Chapter
Part of the Lecture Notes in Physics book series (LNP, volume 593)

Abstract

Understanding and improving the properties of magnetic tunnel junctions are of basic importance for the further development of magnetoelectronics. Here we summarize results on the stability of these devices against thermal, magnetic and electrostatic influences with special emphasis on the physical reasons for the degradation. Critical issues like interdiffusion, magnetic degradation of the hard layer and properties of very small junction systems will be addressed and possible solutions of the related problems suggested.

Keywords

Domain Wall Breakdown Voltage Tunnel Junction Hard Layer Dielectric Breakdown 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Günter Reiss
    • 1
  • Hubert Brückl
    • 1
  • Jan Schmalhorst
    • 1
  • Andy Thomas
    • 1
  1. 1.Dept. of PhysicsUniversity of BielefeldBielefeldGermany

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