Stability of Magnetic Tunnel Junctions
Understanding and improving the properties of magnetic tunnel junctions are of basic importance for the further development of magnetoelectronics. Here we summarize results on the stability of these devices against thermal, magnetic and electrostatic influences with special emphasis on the physical reasons for the degradation. Critical issues like interdiffusion, magnetic degradation of the hard layer and properties of very small junction systems will be addressed and possible solutions of the related problems suggested.
KeywordsDomain Wall Breakdown Voltage Tunnel Junction Hard Layer Dielectric Breakdown
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- 5.T. Palucka, MRS Bulletin 25, 4 (2000)Google Scholar