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Analysis of the Disturbing Influence of Stray Fields in Very Small MRAM Cells by Computer Simulation

  • Willi Schepper
  • Hitoshi Kubota
  • Günter Reiss
Chapter
Part of the Lecture Notes in Physics book series (LNP, volume 593)

Abstract

We present computer simulations of sub-μ magnetic tunnel junctions. The devices with the small element sizes show a pronounced shift of the minor loop into the opposite direction as obtained for larger junctions, which can be interpreted by dipolar antiferromagnetic coupling. The devices show too an asymmetrical behavior in the magnetization reversal. The simulation calculations confirm both experimental results.

Keywords

Exchange Bias Free Layer Magnetic Tunnel Junction Stray Field Sensor Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Willi Schepper
    • 1
  • Hitoshi Kubota
    • 2
  • Günter Reiss
    • 1
  1. 1.Department of PhysicsUniversity of BielefeldBielefeldGermany
  2. 2.Dept. Appl. PhysicsTohoku UniversitySendaiJapan

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