Analysis of the Disturbing Influence of Stray Fields in Very Small MRAM Cells by Computer Simulation

  • Willi Schepper
  • Hitoshi Kubota
  • Günter Reiss
Part of the Lecture Notes in Physics book series (LNP, volume 593)


We present computer simulations of sub-μ magnetic tunnel junctions. The devices with the small element sizes show a pronounced shift of the minor loop into the opposite direction as obtained for larger junctions, which can be interpreted by dipolar antiferromagnetic coupling. The devices show too an asymmetrical behavior in the magnetization reversal. The simulation calculations confirm both experimental results.


Exchange Bias Free Layer Magnetic Tunnel Junction Stray Field Sensor Layer 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Willi Schepper
    • 1
  • Hitoshi Kubota
    • 2
  • Günter Reiss
    • 1
  1. 1.Department of PhysicsUniversity of BielefeldBielefeldGermany
  2. 2.Dept. Appl. PhysicsTohoku UniversitySendaiJapan

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